IXTP3N100A Search Results

Contextual Info: IXTP3N100A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

5n50

Abstract: IXTP3N100A IXTP3N100 1800 IXYS IXTM15N80 IXTM15N80A IXTM20N55 IXTM25N45 IXTM25N45A LM3661TL-1.25
Contextual Info: - 270 - t S s *± € * % %l T a=2 5'C f Vd s or Vd g (V) Vg s Id V g s th) Id s s * /CH * /CH (V) Ig s s Po (A) (W) max min (nA) Vg s (V) (uA) Vd s (V) Id («A) (V) (V) ft % 4# F Ds(on) Vd s Vg s 1Ê ( T a = 2 5 ‘C ) b(on) Ciss g fs Coss Crss ^ B m %

MJ1005

Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40