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    IXTN210P10T Search Results

    IXTN210P10T Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTN210P10T
    		IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 210A SOT-227 Original PDF 181.05KB
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    IXTN210P10T Price and Stock

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    IXYS Corporation IXTN210P10T

    MOSFET P-CH 100V 210A SOT227B
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    DigiKey IXTN210P10T Tube 24 1
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    Mouser Electronics IXTN210P10T 81
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    Newark IXTN210P10T Bulk 299 1
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    TTI IXTN210P10T Tube 300
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    TME IXTN210P10T 1
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    Littelfuse Inc IXTN210P10T

    DiscMSFT PChan-Trench Gate SOT-227B(mini
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    RS IXTN210P10T Bulk 8 Weeks 10
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    IXTN210P10T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		IXTN210P10T -100V 200ns E153432 -100A 210P10T PDF

    sot 227b

    Abstract: ixtn210p
    Contextual Info: Advance Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		IXTN210P10T -100V 200ns E153432 -100A 210P10T sot 227b ixtn210p PDF

    Contextual Info: Preliminary Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier trr = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns G S miniBLOC E153432 S S G Symbol Test Conditions Maximum Ratings


    Original     		IXTN210P10T -100V 200ns E153432 -100A 210P10T PDF