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    IXTH110N10L2 Search Results

    IXTH110N10L2 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH110N10L2
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 110A TO-247 Original PDF 136.82KB
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    IXTH110N10L2 Price and Stock

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    IXYS Corporation IXTH110N10L2

    MOSFET N-CH 100V 110A TO247
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    DigiKey IXTH110N10L2 Tube 1,380 1
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    Mouser Electronics IXTH110N10L2 119
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    Future Electronics IXTH110N10L2 Tube 26 Weeks 300
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    Littelfuse Inc IXTH110N10L2

    Mosfet, N-Ch, 100V, 110A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTH110N10L2
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    Newark IXTH110N10L2 Bulk 167 1
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    RS IXTH110N10L2 Bulk 8 Weeks 30
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    IXTH110N10L2 Datasheets Context Search

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    IXTH110N10L2

    Abstract: IXTT110N10L2 110N10L2 A18M
    Contextual Info: Advance Technical Information IXTH110N10L2 IXTT110N10L2 LinearL2TM Power MOSFET w/ Extended FBSOA VDSS ID25 RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXTH110N10L2 IXTT110N10L2 O-247 063in) 100ms 110N10L2 IXTH110N10L2 IXTT110N10L2 A18M PDF

    Contextual Info: Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTH110N10L2 IXTT110N10L2 RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXTH110N10L2 IXTT110N10L2 O-247 O-268 100ms 110N10L2 PDF