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IXGN80N60A2D1 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGN80N60A2D1		IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 160A FRD SOT-227B	Original	PDF		2

IXGN80N60A2D1 Datasheets Context Search

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IXGN80n60 Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16 Contextual Info: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	80n60a2 80n60a2d1 ic110 if110 +11ot-227b e153432 ixgn80n60a2d1 065b1 728b1 123b1 ixgn80n60 high current igbt sot227b ixgn80n60a2 123b16	PDF

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IXGN80n60

Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16
Contextual Info: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

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80n60a2 80n60a2d1 ic110 if110 +11

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