IXGK75N250 Search Results

IXGK75N250 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGK75N250		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 170A 780W TO264	Original	PDF		5

IXGK75N250 Price and Stock

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IXYS Corporation IXGK75N250 IGBT NPT 2500V 170A TO-264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGK75N250	Tube			1	1 $112.20 10 $112.20 100 $94.83 1000 $94.83 10000 $94.83	Buy Now
Mouser Electronics	IXGK75N250		40			1 $109.22 10 $95.70 100 $95.70 1000 $95.70 10000 $95.70	Buy Now
Future Electronics	IXGK75N250	Tube			25	1 - 10 - 100 $92.94 1000 $92.94 10000 $92.94	Buy Now
TTI	IXGK75N250	Tube			300	1 - 10 - 100 - 1000 $126.44 10000 $126.44	Buy Now
TME	IXGK75N250				1	1 $138.96 10 $138.96 100 $138.96 1000 $138.96 10000 $138.96	Get Quote
Littelfuse Inc IXGK75N250 Transistor, Igbt, 2.5Kv, 170A, To-264; Continuous Collector Current:170A; Collector Emitter Saturation Voltage:3.6V; Power Dissipation:780W; Collector Emitter Voltage Max:2.5Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes \|Littelfuse IXGK75N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGK75N250	Bulk	25		1	1 $108.38 10 $98.61 100 $92.94 1000 $92.94 10000 $92.94	Buy Now

IXGK75N250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
75N250 Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16 Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES	Original	IXGK75N250 IXGX75N250 IC110 O-264 75N250 10-12-09-C IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16	PDF
IXGk 75N250 Abstract: IXGK75N250 IXGX75N250 75N250 Plus PLUS247 Contextual Info: Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGK75N250 IXGX75N250 IC110 O-264 75N250 IXGk 75N250 IXGK75N250 IXGX75N250 Plus PLUS247	PDF
IXGK75N250 Abstract: Plus PLUS247 Contextual Info: Preliminary Technical Information IXGK75N250 IXGX75N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 180 A VCE sat ≤ 2.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXGK75N250 IXGX75N250 IC110 75N250 IXGK75N250 Plus PLUS247	PDF
Contextual Info: Preliminary Technical Information High Voltage IGBTs VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V IXGK75N250 IXGX75N250 For Capacitor Discharge Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGK75N250 IXGX75N250 O-264 75N250	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF