IXGK50N60BU1 Search Results

ixgr32n60cd1

Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
Contextual Info: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1

50N60

Abstract: 50n50 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B
Contextual Info: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW

50N60

Abstract: G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B
Contextual Info: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

G 50N60

Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
Contextual Info: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C