IXGA 15N120C Search Results

IXGA 15N120C Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TW015N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247	Datasheet

IXGA 15N120C Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGA 15N120C		IXYS	TRANS IGBT CHIP N-CH 1200V 30A 4TO-263 AA	Original	PDF	98.42KB	2
IXGA15N120C		IXYS	1200V IGBT	Original	PDF	51.83KB	2

IXGA 15N120C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	15N120C O-220AB O-263	PDF
Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120C O-220AB O-263 O-220	PDF
oni350 Abstract: IXGA 15N120C 15N120C Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	15N120C O-220AB O-263 M10V/ns oni350 IXGA 15N120C 15N120C	PDF
Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	15N120C 15N120C O-220AB O-263	PDF
15N120B2 Abstract: IXGP15N120B2 IXGA15N120B2 Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching =1200 V = 30 A = 3.5 V = 137 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR	Original	15N120B2 O-220AB O-263 065B1 728B1 123B1 728B1 15N120B2 IXGP15N120B2 IXGA15N120B2	PDF
Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	15N120C O-220AB O-263 728B1	PDF
RGE 17-18 Abstract: TO220-4 weight Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i	OCR Scan	15N120C O-220 O-263 RGE 17-18 TO220-4 weight	PDF
12n60c Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM	Original	O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60	PDF