IXFN40N110P Search Results

IXFN40N110P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN40N110P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1100V 34A SOT-227B	Original	PDF		4

IXFN40N110P Price and Stock

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IXYS Corporation IXFN40N110P MOSFET N-CH 1100V 34A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN40N110P	Tube			300	1 - 10 - 100 - 1000 $60.56 10000 $60.56	Buy Now
Mouser Electronics	IXFN40N110P					1 - 10 - 100 - 1000 $67.65 10000 $67.65	Get Quote
TME	IXFN40N110P		1		1	1 $26.62 10 $26.62 100 $26.62 1000 $26.62 10000 $26.62	Buy Now
Littelfuse Inc IXFN40N110P DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXFN40N110P	Bulk		8 Weeks	10	1 - 10 $93.66 100 $85.23 1000 $85.23 10000 $85.23	Get Quote

IXFN40N110P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 34A Ω 260mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN40N110P 300ns OT-227 E153432 40N110P	PDF
40n110p Abstract: IXFN40 IXFN40N110P Contextual Info: IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	IXFN40N110P 300ns OT-227 E153432 40N110P 3-28-08-A IXFN40 IXFN40N110P	PDF
Contextual Info: VDSS ID25 IXFN40N110P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	IXFN40N110P 300ns OT-227 E153432 40N110P 3-28-08-A	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF