IXFN26N100P Search Results

IXFN26N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN26N100P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 23A SOT-227B	Original	PDF		4

IXFN26N100P Price and Stock

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IXYS Corporation IXFN26N100P MOSFET N-CH 1000V 23A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN26N100P	Tube			300	1 - 10 - 100 - 1000 $41.32 10000 $41.32	Buy Now
Mouser Electronics	IXFN26N100P					1 - 10 - 100 - 1000 $46.66 10000 $46.66	Get Quote
Verical	IXFN26N100P		6		2	1 - 10 $53.27 100 $53.27 1000 $53.27 10000 $53.27	Buy Now
TTI	IXFN26N100P	Tube			300	1 - 10 - 100 - 1000 $41.32 10000 $41.32	Buy Now
TME	IXFN26N100P		6		1	1 $42.26 10 $33.53 100 $33.53 1000 $33.53 10000 $33.53	Buy Now
Littelfuse Inc IXFN26N100P Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube \|Littelfuse IXFN26N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFN26N100P	Bulk			300	1 - 10 - 100 $43.30 1000 $43.30 10000 $43.30	Buy Now
RS	IXFN26N100P	Bulk		8 Weeks	10	1 - 10 $63.90 100 $58.79 1000 $58.79 10000 $58.79	Get Quote

IXFN26N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN26N100P 300ns OT-227 E153432 26N100P 3-07-A	PDF
IXFN26N100P Contextual Info: IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B IXFN26N100P	PDF
Contextual Info: VDSS ID25 IXFN26N100P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF