IXFN 80N50P Search Results

IXFN 80N50P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN80N50P		IXYS	PolarHV HiPerFET Power MOSFET	Original	PDF	124.21KB	5

IXFN 80N50P Price and Stock

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IXYS Corporation IXFN80N50P MOSFET N-CH 500V 66A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50P	Tube	1,965		1	1 $34.54 10 $25.55 100 $22.54 1000 $22.54 10000 $22.54	Buy Now
Mouser Electronics	IXFN80N50P		520			1 $32.99 10 $25.04 100 $22.54 1000 $22.54 10000 $22.54	Buy Now
Quest Components	IXFN80N50P		56			1 $39.07 10 $39.07 100 $33.21 1000 $33.21 10000 $33.21	Buy Now
TTI	IXFN80N50P	Tube			300	1 - 10 - 100 - 1000 $22.54 10000 $22.54	Buy Now
IBS Electronics	IXFN80N50P		300		10	1 - 10 $31.81 100 $31.16 1000 $30.91 10000 $30.91	Buy Now
Littelfuse Inc IXFN80N50P Trans MOSFET N-CH 500V 66A 4-Pin SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFN80N50P		5		2	1 - 10 $31.20 100 $31.20 1000 $31.20 10000 $31.20	Buy Now
Newark	IXFN80N50P	Bulk	45		1	1 $33.85 10 $25.04 100 $22.09 1000 $22.09 10000 $22.09	Buy Now
RS	IXFN80N50P	Bulk		8 Weeks	10	1 - 10 $34.86 100 $32.07 1000 $32.07 10000 $32.07	Get Quote

IXFN 80N50P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N50P Abstract: IXFN 80N50P E153432 Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P 80N50P IXFN 80N50P E153432	PDF
Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P OT-227 E153432 405B2	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80N50P	PDF
80N50 Abstract: 80N50P IXFN 80N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80N50P 80N50 80N50P IXFN 80N50P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF