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    IXFH320N10T2 Search Results

    IXFH320N10T2 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH320N10T2
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 320A TO-247 Original PDF 6
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    IXFH320N10T2 Price and Stock

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    IXYS Corporation IXFH320N10T2

    MOSFET N-CH 100V 320A TO247AD
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    DigiKey IXFH320N10T2 Tube 1,404 1
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    Mouser Electronics IXFH320N10T2 2,271
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    Newark IXFH320N10T2 Bulk 6 1
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    TTI IXFH320N10T2 Tube 30 30
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    TME IXFH320N10T2 1
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    Chip 1 Exchange IXFH320N10T2 13,964
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    IBS Electronics IXFH320N10T2 300 30
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    Littelfuse Inc IXFH320N10T2

    Trans MOSFET N-CH 100V 320A 3-Pin(3+Tab) TO-247
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    Verical () IXFH320N10T2 820 4
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    RS IXFH320N10T2 Bulk 8 Weeks 30
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    Quest Components IXFH320N10T2 672
    • 1 $25.30
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    IXYS Integrated Circuits Division IXFH320N10T2

    MOSFET N-CH 100V 320A TO-247
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    Win Source Electronics IXFH320N10T2 2,800
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    IXFH320N10T2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH320N10T2 IXFT320N10T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions D D (Tab) S Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXFH320N10T2 IXFT320N10T2 O-247 320N10T2 PDF

    IXFH320N10T2

    Abstract: IXFT320N10T2 320N10T
    Contextual Info: Advance Technical Information IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXFH320N10T2 IXFT320N10T2 O-247 320N10T2 IXFH320N10T2 IXFT320N10T2 320N10T PDF

    100v, 100a mosfet

    Abstract: siemens Low voltage AC Motor
    Contextual Info: IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100


    Original     		IXFH320N10T2 IXFT320N10T2 O-247 062in. O-247) O-247 O-268 Characterist150 100v, 100a mosfet siemens Low voltage AC Motor PDF