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    IXFT320N10T2 Search Results

    IXFT320N10T2 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFT320N10T2
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 320A TO-26 Original PDF 6
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    IXFT320N10T2 Price and Stock

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    Littelfuse Inc IXFT320N10T2

    Mosfet, N-Ch, 100V, 320A, To-268; |Littelfuse IXFT320N10T2
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    Newark () IXFT320N10T2 Bulk 1
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    IXFT320N10T2 Bulk 300
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    RS IXFT320N10T2 Bulk 8 Weeks 30
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    Onlinecomponents.com IXFT320N10T2
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    Flip Electronics IXFT320N10T2 90
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    Littelfuse Inc IXFT320N10T2-TRL

    Ixft320N10T2 Trl/ T&r; |Littelfuse IXFT320N10T2-TRL
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    Newark IXFT320N10T2-TRL Tape & Reel 400
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    IXYS Corporation IXFT320N10T2

    MOSFETs Trench T2 HiperFET Power MOSFET
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    TTI IXFT320N10T2 Tube 300
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    Future Electronics IXFT320N10T2 Tube 24 Weeks 300
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    Bristol Electronics IXFT320N10T2 11 1
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    Quest Components IXFT320N10T2 8
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    TME IXFT320N10T2 1
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    IXYS Corporation IXFT320N10T2-TRL

    MOSFETs TO268 100V 320A N-CH TRENCH
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    TTI IXFT320N10T2-TRL Reel 400
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    Bristol Electronics IXFT320N10T2-TRL 15,479 1
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    Quest Components () IXFT320N10T2-TRL 11,404
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    IXFT320N10T2-TRL 11,092
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    TME IXFT320N10T2-TRL 400
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    IXYS Integrated Circuits Division IXFT320N10T2-TRL

    POWER FIELD-EFFECT TRANSISTOR, 320A I(D), 100V, 0.0035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-268AA
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    Quest Components IXFT320N10T2-TRL 979
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    IXFT320N10T2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH320N10T2 IXFT320N10T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions D D (Tab) S Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		ixfh320n10t2ixft320n10t2o-247320n10t2 PDF

    IXFH320N10T2

    Abstract: IXFT320N10T2 320N10T
    Contextual Info: Advance Technical Information IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		ixfh320n10t2ixft320n10t2o-247320n10t2+1320n10t PDF

    100v, 100a mosfet

    Abstract: siemens Low voltage AC Motor
    Contextual Info: IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100


    Original     		ixfh320n10t2ixft320n10t2o-247062in+4o-268characterist150100v, 100a mosfetsiemens low voltage ac motor PDF