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    IXFB30N120P Search Results

    IXFB30N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFB30N120P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A PLUS264 Original PDF 5
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    IXFB30N120P Price and Stock

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    IXYS Corporation IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264
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    DigiKey IXFB30N120P Tube 538 1
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    Mouser Electronics IXFB30N120P 52
    • 1 $45.59
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    Future Electronics IXFB30N120P Tube 300
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    Chip Stock IXFB30N120P 4,766
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    IXYS Corporation IXFB30N120P (POLAR HIPERFET)

    Mosfet, N-Ch, 1.2Kv, 30A, Plus264 Rohs Compliant: Yes |Ixys Semiconductor IXFB30N120P
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    Newark IXFB30N120P (POLAR HIPERFET) Bulk 191 1
    • 1 $45.59
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    IXYS Integrated Circuits Division IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264
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    Win Source Electronics IXFB30N120P 3,266
    • 1 $93.84
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    IXFB30N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFB30N120P

    Contextual Info: Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET VDSS = 1200 V ID25 = 30 A Ω RDS on ≤ 350 mΩ ≤ 300 ns trr N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C VGSS Maximum Ratings 1200 V Continuous


    Original
    IXFB30N120P PLUS264TM 30N120P IXFB30N120P PDF

    nf950

    Abstract: ixFB30N120P 30N120 30N120P
    Contextual Info: IXFB30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D nf950 ixFB30N120P 30N120 PDF

    30N120P

    Abstract: mosfet IXFB 30N120P IXFB30N120P nf950
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXFB30N120P 300ns PLUS264TM 30N120P 1-07-A mosfet IXFB 30N120P IXFB30N120P nf950 PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB30N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original
    PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original
    000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF