IWRF Search Results
IWRF Price and Stock
IWRF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
AN7410
Abstract: AN362 an362 Panasonic CI 7410 an362 fm f1010 18k05 vco IF AN-741
|
OCR Scan |
AN7410 10//F-o 015a/F 27kfl 470pFÂ AN7410 AN362 an362 Panasonic CI 7410 an362 fm f1010 18k05 vco IF AN-741 | |
E 13007-1
Abstract: 13007 h3 detail of D 13007 K 13007 he 13007-1 SE 13007 SEC 13005 13005 2 E 13007 sec 13007
|
OCR Scan |
MlL-H-38510/610 536-BIT 536-b1t E 13007-1 13007 h3 detail of D 13007 K 13007 he 13007-1 SE 13007 SEC 13005 13005 2 E 13007 sec 13007 | |
Contextual Info: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide |
OCR Scan |
V17410Ais HY51V17410A HY51V1741 D36-00-MAY94 4b75Q HY51V17410A HY51V17410AJ HY51V17410ASLJ HY51V17410AT HY51V1741OASLT | |
iCreate Technologies
Abstract: i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127
|
Original |
i5127-L iCreate Technologies i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127 | |
Contextual Info: Cre a t e i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 Preliminary iCreate Technologies Corporation Release date: 2007/07/16 2007 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. |
Original |
i5127-L | |
Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
|
OCR Scan |
2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp | |
i5128-lg
Abstract: 330ohm resistor i5128-L i5128 samsung 16GB Nand flash iCreate Technologies I5128LG icreate marking W17 i5128L
|
Original |
i5128-L i5128-lg 330ohm resistor i5128-L i5128 samsung 16GB Nand flash iCreate Technologies I5128LG icreate marking W17 i5128L | |
Contextual Info: IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time |
OCR Scan |
IBM0164405B IBM0164405P 128ms 104ns 381mW 00030TE 128ms 115ma | |
ED98
Abstract: 64MEDO
|
OCR Scan |
13urst-EDO 64M-EDO ED98 64MEDO | |
Contextual Info: Create i5122-L/i5122-LG i5122-L/i5122-LG High-Speed USB Flash Disk Controller Preliminary Data Sheet Version 0.34 iCreate Technologies Corporation Release date: 12/08/2005 2005 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. |
Original |
i5122-L/i5122-LG VD33P/VD33 VS33P/VS33 16Gbit | |
A91V
Abstract: A16V N5722 A0642 aafj
|
OCR Scan |
LE28F4001AM, ARS-15 5242B87- 150ns 20fiAimai) OP32tJV LE28F4001AM TSOP32ti LE28F4001ATS A91V A16V N5722 A0642 aafj | |
BTI ML-1 94V-0
Abstract: 94V-0 BTI ML-1 TRANSISTOR SMD MARKING CODE ALG horizontal transistor tt 2206 smd transistor marking 44s MEC 1300 nu ALG B7 smd transistor transistor horizontal tt 2206 jj-02 94v-0 gm 5766 lf
|
OCR Scan |
||
Contextual Info: Cre a t e i5128-L i5128-L High-Speed USB Flash Disk Controller Data Sheet Version 1.00 iCreate Technologies Corporation Release date: 2006/08/18 2006 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. |
Original |
i5128-L | |
Contextual Info: n b427S25 00432E3 T71 B N E C E . |\|EC NEC Elpntronirs |nr juPD78244 Family fiPD78243/244 8-Bit, K-Series Microcontrollers With A/D Converter, EEPROM, Real-Time Output Ports September 1993 Description Features The /JPD78243 and juPD78244 are members of the |
OCR Scan |
b427S25 00432E3 juPD78244 fiPD78243/244) /JPD78243 /PD78244 pPD78214 /JPD78218A D78243) | |
|
|||
Contextual Info: -HYUNDAI H Y 5 1 1 7 1 0 0 A S e r ie s 16MX 1-bit CMOS DRAM DESCRIPTION The HY5117100Aisthe new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide |
OCR Scan |
HY5117100Aisthe HY5117100A HV5117100Ato 1AD20-10-MAY94 HY51171OOA 1A020-10-MAYM HY5117100AJ HY5117100ASLJ | |
1c09
Abstract: SR802 SR806
|
OCR Scan |
SR802 SR815 DO-201 D0-201A 1c09 SR806 | |
yx 801
Abstract: yx 801 led yx 801 ic D78233GC 78234 RJLTC PD78233 EV-9900 TRXT 707 UPD78237
|
OCR Scan |
uPD78233 uPD78234 uPD78237 uPD78238 PD78233, 78K/II 78234v PD78234, UPD78233, PD78234) yx 801 yx 801 led yx 801 ic D78233GC 78234 RJLTC PD78233 EV-9900 TRXT 707 | |
5L0F
Abstract: jd-e 94v-0 amphenol MIL-C-55116 u-229/u MIPI spec KL SN 102 94v0 PCB VK 557 M1305 tnr 241 km mil-c-55116
|
OCR Scan |
||
nec V25 microcontroller
Abstract: 6634b stm cl-11 PD70330 D70330 PD70320 PD70P322 rf mems switch D70108 ea57
|
OCR Scan |
uPD70330 uPD70332 V35TM) 16-bit uPD70330/7 /PD70108/70 V25TM) /PD70330/70332 nec V25 microcontroller 6634b stm cl-11 PD70330 D70330 PD70320 PD70P322 rf mems switch D70108 ea57 | |
samsung flash markingContextual Info: Preliminary Create i5128-L i5128-L High-Speed USB Flash Disk Controller Preliminary Data Sheet Version 0.10 iCreate Technologies Corporation Release date: 04/10/2006 2006 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. |
Original |
i5128-L samsung flash marking |