Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IW4012BN Search Results

    IW4012BN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IW4012BN
    		Integral Dual 4-input NAND gate, high-voltage silicon-gate CMOS Original PDF 110.49KB 4

    IW4012BN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF

    IW4012BN

    Abstract: IW4012BD
    Contextual Info: TECHNICAL DATA IW4012B Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4012B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original     		IW4012B IW4012B IW4012BN IW4012BD PDF