IW4012BD Search Results

IW4012BD Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IW4012BD		Integral	Dual 4-input NAND gate, high-voltage silicon-gate CMOS	Original	PDF	110.49KB	4

IW4012BD Datasheets Context Search

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IW4012BN Abstract: IW4012BD Contextual Info: TECHNICAL DATA IW4012B Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4012B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C	Original	IW4012B IW4012B IW4012BN IW4012BD	PDF

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IW4012BN

Abstract: IW4012BD
Contextual Info: TECHNICAL DATA IW4012B Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4012B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C

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