st 2n 3906
Abstract: 2n390 2N390S 2N3906 2N3905 MOTOROLA 2N3906-O 3906 2n 2N3906TF 2N3905 3906
Contextual Info: M A XIM U M RATINGS Symbol Value Unit C o lle c to r -E m itte r V o lta g e VCEO 40 Vdc C o lle c to r-B a s e V o lta g e VCBO 40 V dc E m itte r-B a s e V o lta g e Vebo 5.0 Vdc 'c 200 m Adc Pd 625 mW m W /°C Rating C o lle c to r C u rre n t - C o n tin u o u s
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2n39052n3906st 2n 39062n390+62n390s2n3905 motorola2n3906-o3906 2n2n3906tf3906
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UFNF230
Abstract: F-431
Contextual Info: U N I T R O D E CO RP 9347963 ^2 D E | ci347clb3 OGlDflfll 92D U N I T R O D E CORP POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 10 881 D UFNF430 UFNF431 UFNF432 UFNF433 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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i347clb3ufnf430ufnf431ufnf432+7ufnf433ufnf320ufnf321ufnf322ufnf323ufnf230f-431
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2N6761
Abstract: 2N6762 2N6767 2nc762
Contextual Info: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi
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t-39-112n67612n67623fi75dfll+22n67672nc762
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motorola diode device data
Abstract: IV01TS
Contextual Info: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state re lia bility in replacem ent of mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and U niform Tuning Ratio
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mmbv809lt1ot-23o-236abiv01ts+1motorola diode device data
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15n50
Abstract: MTM15N35 SN45 2657 mosFET 15n45 MTM15N50 SN45 diode MTM15N45 AN569 0165R
Contextual Info: MOTOROLA SC X S T R S /R MOTOROLA m e F D I b3b?as4 o m a a a o a | _ m SEMICONDUCTOR TECHNICAL DATA M TM 15N45 MTM15IM50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-M ode S ilico n G ate TM O S B TM O S POW ER FETs
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15n4515n50y145m97a-02+9o-204aemtm15n35sn452657 mosfetmtm15n50sn45 diodemtm15n45an5690165r
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2N6782
Abstract: c0366 diode sv 0367
Contextual Info: □1 E SOLID STATE DE I 3 fi7 S □ fl1 Q01Û 4DÔ fi f - — - Z aianaarcfl'ower M O S F E T s 2N6782 File Number 1592 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E
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2n67821a41ec0366diode sv 0367 |
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Contextual Info: M CR218FP Silicon Controlled Rectifiers Series Reverse Blocking Thyristors . . . d e sig ned p rim a rily fo r ha lf-w ave ac c o n tro l ap plication s, such as m o to r con trols, heating c o n tro ls and p o w e r s u p p ly cro w b a r circuits. ISOLATED SCRs
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cr218fp221c-02mcr218fp |
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