ITT33 Search Results

10W Power Amplifier

Abstract: ITT338509D 6 ghz amplifier 10w
Contextual Info: 10W Power Amplifier Die 8.0 – 11.0 GHz ITT338509D FEATURES • • • • ADVANCED INFORMATION Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

ITT333105BD

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
Contextual Info: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation

1008CS

Abstract: C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S
Contextual Info: 4.6V 1.2W RF Power Amplifier IC for AMPS ITT333106BD Applications Features AMPS Cellular Telephones Cellular Digital Packet Data CDPD +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG • • • • • • • Class AB Bias 750 to 900 MHz Operation

32TBD

Abstract: ITT338505D
Contextual Info: 8W Power Amplifier Die 9.5 – 10.5 GHz ADVANCED INFORMATION ITT338505D Features • • • • 32% Typical Power Added Efficiency High Linear Gain: 25 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

Contextual Info: 12W Power Amplifier Die 9 – 10.5 GHz ITT338510D FEATURES • • • • • • ADVANCED INFORMATION Three Stage Balanced High Power Amplifier Broadband Performance 34% Minimum Power Added Efficiency High Linear Gain: 25 dB Minimum Input VSWR 2:1, Minimum

150 g35 capacitor

Contextual Info: 5.8V 1.4W RF Power Amplifier 1C for AMPS/ARDIS ITT334105BD Applications AMPS Cellular Telephones Ardis WANs Cellular Digital Packet Data CDPD PRELIMINARY Features • • • • • • • Class AB Bias 750 to 900 MHz Operation 50 i2 Input Impedance Simple 2 Element Output Match

Contextual Info: 5.8V 1.0W RF Power Amplifier IC for AMPS ITT334102BD Applications PRELIMINARY Features AMPS Cellular Telephones Cellular Digital Packet Data CDPD • • • • • • • • Class AB Bias 800 to 875 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match

Contextual Info: RF 1C Product Roadmap G SM PCS-TDMA PCS-COMA PCS-1900 \ 2-Way Paging ging}fV ITT334103BD 5.8V 1.2W - .— »r ISM/Paging - ► Single supply rTT332102BD 3.3V 1.2W Ha FLEX pA CT ISM900 DECT W LL PWT P A C S DCT-U ISM900 - ► rrT332103BD3.3V 0.7W

Contextual Info: 4.6V 1.2W RF Power Amplifier iC for AMPS ITT333106BD Applications Features AMPS Cellular Telephones Cellular Digital Packet Data CDPD • • • • • • • Class AB Bias 750 to 900 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match Small Size — 16 Pin Narrow Body SOIC Plastic Package

ITT333105BD

Contextual Info: 4.6V 1.3W RF Power Amplifier 1C for ETACS ITT333105BD Applications PRELIMINARY Features ETACS Cellular Telephones ISM 900 MHz • • • • • • • Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match Small Size — 16 Pin Narrow Body SOIC Plastic Package

ITT332203AD

Abstract: 1008CS 1008CT
Contextual Info: 3.6V 450mW RF Power Amplifier IC for DECT ITT332203AD Applications Features • • • • • • • DECT PCS Personal Wireless Telephony PWT Cordless PBX Radio/Wireless Local Loop (RLL/WLL) Typical 3.6 Volt Performance N/C N/C +VDD1 +VDD2 GND GND GND

Contextual Info: 4.6V 1.2W RF Power Amplifier IC for AMPS ITT333106BD Applications Features AMPS Cellular Telephones • • • • • • • Cellular Digital Packet Data CDPD Class AB Bias 750 to 900 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match Small Size — 16 Pin Narrow Body SOIC Plastic Package

GaAsTEK

Abstract: ITT338510D
Contextual Info: ADVANCED INFORMATION 12W Power Amplifier Die 8.5 - 10.0 GHz ITT338510D FEATURES • • • • Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Cl Input/Output Impedance Self-Aligned MSAG MESFET Process

si8070

Contextual Info: 4.6V 1.0W RF Power Amplifier IC for AMPS ITT333101BD Applications PRELIMINARY Features AMPS Cellular Telephones Cellular Digital Packet Data CDPD • • • • • • • • Class AB Bias 800 to 875 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match

Contextual Info: 12W Single-ended Power Amplifier Die 9.0 – 10.5 GHz ITT338512D ADVANCED INFORMATION Features Three Stage Single-ended High Power Amplifier • • • • Broadband Performance 30% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

1008CS

Abstract: C0805C472K5RAC C1206C104K5RAC 12w c7
Contextual Info: 5.8V 1.2W RF Power Amplifier IC for AMPS ITT334103BD Applications Features AMPS Cellular Telephones Cellular Digital Packet Data CDPD +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND -VGG1 -VGG2 • • • • • • • • Class AB Bias

C11AH4R7B5TXL

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC ISM900
Contextual Info: 5.8V 1.2W RF Power Amplifier IC for ISM900 ITT334104BD Applications Features • • • • • • • 900 MHz ISM Cordless Telephones Wireless Modems N-PCS +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND -VGG1 -VGG2 Class AB Bias 850 to 1000 MHz Operation

itt333104bd

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S IS-54
Contextual Info: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Applications Features IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) • • • • • • Class AB Bias 800 to 1000 MHz Operation 50 Ω Input Impedance Simple 2 Element Output Match

Contextual Info: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match

ITT333104BD

Contextual Info: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match

04 ow

Contextual Info: 4.6V 1.0W RF Power Amplifier IC for ISM900 ITT333103BD Applications Features 900 MHz ISM • • • • • • • Cordless Telephones Wireless Modems N-PCS — Class AB Bias 850 to 1000 MHz Operation 50 £2 Input Impedance Simple 2 Element Output Match

Contextual Info: 12W Single-ended Power Amplifier Die 10 – 11 GHz ADVANCED INFORMATION ITT338513D Features Three Stage Single-ended High Power Amplifier • • • • Broadband Performance 30% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

Contextual Info: 8W Power Amplifier Die 9.0 – 10.0 GHz ITT338506D ADVANCED INFORMATION Features • • • • 32% Typical Power Added Efficiency High Linear Gain: 25 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

ITT332102BD

Abstract: T491A335K006AS 1008CS C0805C103K5RAC
Contextual Info: 3.3V 1.2W RF Power Amplifier IC for N-PCS/ISM900 ITT332102BD Applications Features • • • • • • • • Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MHz ISM +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C