GAASTEK Search Results

ITT130AK

Abstract: SC74 5310 VA MARKING
Contextual Info: SPST High Isolation, Absorptive Switch Negative or Positive Control ITT130AK FEATURES • • • • • High isolation 39 dB at 2.5 GHz Miniature, SOT6 package Reflective open port (J1) Non-Reflective port (J2) Self-Aligned MSAG Process TRUTH TABLE (Negative Control)

ITTS501AJ

Abstract: rf05v itt501 SPDT HIGH POWER
Contextual Info: SPDT High Power T/R Switch ITTS501AJ PRELIMINARY INFORMATION FEATURES • • • MSOP-8 package Positive Control Self-Aligned MSAG -Switch MESFET Process Description Maximum Ratings T The ITT501AJ is a high power SPDT switch in a very small plastic MSOP package for

8c4n

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC ITT2104AF
Contextual Info: 3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900 ITT2104AF Applications Features • • • • • • • • Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MHz ISM VDD1 VDD2 N/C GND GND GND GND GND RF IN PRELIMINARY Single Positive Supply

ITT8507D

Contextual Info: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

ITT313503D

Contextual Info: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D FEATURES • • • • ADVANCED INFORMATION Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS

ITT2305AK

Contextual Info: 3.0V 100mW RF Power Amplifier IC for Bluetooth ITT2305AK PRELIMINARY FEATURES • • • • • • • • 20 dB Gain – dramatically increases range of your low power bluetooth devices Single 3.0V positive supply – operates over a wide range of supply voltages

10W Power Amplifier

Abstract: ITT338509D 6 ghz amplifier 10w
Contextual Info: 10W Power Amplifier Die 8.0 – 11.0 GHz ITT338509D FEATURES • • • • ADVANCED INFORMATION Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

ITT002AB

Contextual Info: SPDT Non-Reflective Switch - High Isolation Negative or Positive Control ITT002AB FEATURES • • • • • • • • SOIC-8 package Non-Reflective High Isolation 40 dB @ 1 GHz Usable to 4 GHz Low DC Power Consumption Positive Control when “floated” with capacitors

5.5 GHz power amplifier

Abstract: ITT8403FP 6 18 ghz amplifier 4w ITT8403
Contextual Info: 4W Power Amplifier 5.5 – 7.2 GHz ITT8403FP ADVANCED INFORMATION FEATURES • • • • • 40% Typical Power Added Efficiency 18 dB Typical Small Signal Gain 45 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance.

Contextual Info: 2W Power Amplifier 13 – 15 GHz ITT8502 ADVANCED INFORMATION FEATURES • • • • • • 24% Typical Power Added Efficiency 17.5 dB Typical Small Signal Gain 39.5 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance

ITT373501D

Abstract: digital phase shifter mhz
Contextual Info: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF O ut R F In

ITT333105BD

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
Contextual Info: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation

ITT502AJ

Abstract: ITTS502AJ SPDT HIGH POWER
Contextual Info: SPDT High Power T/R Switch, DC TO 3.5 GHz ITTS502AJ PRELIMINARY INFORMATION FEATURES • • • • DC - 3.5 GHz Operation Low insertion loss Positive 3 to 5 volt control Small MSOP8 package Description Maximum Ratings T The ITT502AJ is a high power SPDT switch in

ITT8506D

Contextual Info: 8W Power Amplifier Die 9.5 – 10.5 GHz ITT8506D ADVANCED INFORMATION Features • • • 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8506D is a three stage MMIC power

ITTS402AH

Abstract: J12-3
Contextual Info: SP4T Switch, 3 Volt Positive Control ITTS402AH ADVANCED INFORMATION FEATURES • • • • • QSOP-28 lead package Non-Reflective Low DC Power Consumption Positive Control when “floated” with capacitors Self-Aligned MSAG MESFET Process Description

ITTA503AD

Contextual Info: GaAs Digital Attenuator, 5 Bit, 0.5,1,2,4,8 dB DC 2.0 GHz ITTA503AD ADVANCED INFORMATION FEATURES • • • 15.5 dB Attenuation Range in 0.5 dB steps High attenuation accuracy Packaged in a SOIC 16 package Description Maximum Ratings T The ITTA503AD is a GaAs FET Digital Attenuator

32TBD

Abstract: ITT338505D
Contextual Info: 8W Power Amplifier Die 9.5 – 10.5 GHz ADVANCED INFORMATION ITT338505D Features • • • • 32% Typical Power Added Efficiency High Linear Gain: 25 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

Contextual Info: 12W Power Amplifier Die 9 – 10.5 GHz ITT338510D FEATURES • • • • • • ADVANCED INFORMATION Three Stage Balanced High Power Amplifier Broadband Performance 34% Minimum Power Added Efficiency High Linear Gain: 25 dB Minimum Input VSWR 2:1, Minimum

GaAsTEK

Contextual Info: 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ Preliminary FEATURES • • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 to 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package

ITT S11

Contextual Info: 1W Power Amplifier 12 - 16 GHz ITT8602FN PRELIMINARY FEATURES • • • • • • 35.5 dB Typical Small Signal Gain 50 Ω Input/Output Impedance 40 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance at Ku-band.

15 GHz high power amplifier

Contextual Info: 8W GaAs Power Amplifier 6.0 – 7.6 GHz ITT8402FM ADVANCED INFORMATION FEATURES • • • • • • • High Output Power: 10 Watts (6.5-7.5 GHz) High Linear Power (P1dB): 36.5 dBm typical High Power Added Efficiency: 25% typical at P1dB High Linear Gain: 20 dB typical

Contextual Info: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual

gsat

Contextual Info: 6W Power Amplifier 5.5 – 7.0 GHz ITT8404 FN/FP ADVANCED INFORMATION FEATURES • • • • 30% Typical Power Added Efficiency High Linear Gain: 16 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8404FN

Contextual Info: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D Balanced Three Stage LNA with Limiter FEATURES • • • • ADVANCED INFORMATION 8 to 11 GHz Operation 50 Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)