GSAT Search Results

Contextual Info: AIT Components Ltd Surface Mount 3D Transponder Coils GSAT-3D15 Series Features: Low Profile Surface Mount Wire Wound Construction High Q Value Operating Temperature -40 to +850C Main Applications: Asset Management Tracking Access Control Tyre Pressure Monitoring TPMS

gsat 12 in sensors

Abstract: MMA6222AKEG txy capacitor capacitor 475A 20-PIN AEC-Q100 airbag crash sensor dsp airbag MMA6
Contextual Info: MMA6222AKEG Rev 0, 12/2009 Freescale Semiconductor Technical Data Analog Dual Axis Micromachined Accelerometer MMA6222AKEG MMA6255AKEG MMA621010AKEG The MMA62XXAKEG series of dual axis X and Y silicon capacitive, micromachined accelerometers features a full digital signal processing for

10W Power Amplifier

Abstract: ITT338509D 6 ghz amplifier 10w
Contextual Info: 10W Power Amplifier Die 8.0 – 11.0 GHz ITT338509D FEATURES • • • • ADVANCED INFORMATION Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

Mobile AMD-K6-II

Abstract: AMD K6
Contextual Info: Preliminary Information AMDJ1 Mobile AMD-K6 Processor Data Sheet Publication # 2 1 0 4 9 Rev: H Issue Date: September 1998 Amendment T his docum ent contains in fo rm atio n on a p ro d u ct u n d e r developm ent a t A dvanced Micro D evices AMD . The in fo rm atio n is in te n d e d to help you e v alu a te this pro d u ct. AMD r e ­

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

145GHz

Contextual Info: MA08507FP 4W Power Amplifier 14 - 14.5 GHz Advanced Information FEATURES •= •= •= •= 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process N/C GND GND N/C MA0 8507FP RFIN

MA08506D

Contextual Info: MA08506D 8W Power Amplifier Die 9.5 - 10.5 GHz Advanced Information Features •= •= VDD VDD 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance •= Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Functional Schematic Description Maximum Ratings (T

8602FN

Abstract: MA08602FN ku vsat amplifier 8602F
Contextual Info: MA08602FN 1W Power Amplifier 12 - 16 GHz FEATURES •= •= •= •= •= •= 35.5 dB Typical Small Signal Gain 50 Ω Input/Output Impedance 40 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance at Ku-band.

TA 7136 p

Abstract: ICL7136CPL ICL7136CQH ICL7136 ICL7136CMH
Contextual Info: 19-0951; Rev 2; 9/96 JW Æ X A JV X Low Power, 316 Digit A /D Converter Versatility and accuracy are inherent features of this con­ verter. The dual-slope conversion technique automatical­ ly rejects interference signals common in industrial envi­ ronments. The true differential input and reference are

lola

Abstract: TUBE 1625
Contextual Info: Single Mode WDM 1550nm / 1625 nm Perform ance Specification 1550/1625 nm P r e m iu m U ltra Bandpass Sta n d a rd 1550 and 1650nm ± 5nm Operating Temperature -40'C to +85 'C Storage Temperature -40 "C to + 8 5 6C Directivity >60dB 1X2 Reflectance >65dB 2X2

A004R

Abstract: MGA-545P8 MGA-545P8-BLK MGA-545P8-TR1 MGA-545P8-TR2 MO229 51C MARKING code
Contextual Info: Agilent MGA-545P8 50 MHz to 7 GHz Medium Power Amplifier Data Sheet Description Agilent’s MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifier that offers excellent power output at 5.8 GHz. Although optimized for 5.8 GHz applications,

EX-219

Abstract: OX-249
Contextual Info: Space Products Helping Customers Innovate, Improve & Grow Space p Products Hi-Reliability Hi-Reliabili Crystals & Oscillators XTAL - Quartz Crystals XO - Clock Oscillators VCXO - Voltage Controlled Crystal Oscillators TCXO - Temperature Compensated Crystal Oscillators

ITT S11

Contextual Info: 1W Power Amplifier 12 - 16 GHz ITT8602FN PRELIMINARY FEATURES • • • • • • 35.5 dB Typical Small Signal Gain 50 Ω Input/Output Impedance 40 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance at Ku-band.

gsat

Contextual Info: 6W Power Amplifier 5.5 – 7.0 GHz ITT8404 FN/FP ADVANCED INFORMATION FEATURES • • • • 30% Typical Power Added Efficiency High Linear Gain: 16 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8404FN

CXD1272Q

Abstract: CXD1272R audio compressor expander IC 8 pin one band compander circuit application
Contextual Info: CXD1272Q/R Cellular Phone Filter LSI with On-Chip Compandor Description The CXD1272Q/R is a filter LSI for cellular phones. Successor to the CXD1271Q/R, this device features an on-chip compandor a new function. Furthermore, addition of an attenuator for digital control provides

IC TDA 8893 circuit diagram

Abstract: one chip tv ic 8893 IC TDA 8893 TDA 8893 8893 single chip tv processor Microcontroller AT89C2051 pin diagram tda 8172 equivalent TDA 4935 so do ic tda 8893 tda 8172
Contextual Info: U4930B Single Chip TV Baseband Processor Description The U4930B is an alignment-free, I2C-bus controlled TV baseband processor that has been designed for use with the baseband delay line U3665M and the SECAM decoder U4935B. The IC includes a multiple video-input selector switch,

AA026P2-00

Contextual Info: 23.5–26.5 GHz GaAs MMIC Power Amplifier AA026P2-00 Features Chip Outline • Single Bias Supply Operation 6 V 3.080 ■ 17 dB Typical Small Signal Gain 2.960 ■ 24 dBm Typical P1 dB Output Power at 26.5 GHz 2.068 ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD

AEC-Q100

Abstract: Y11H MMA6
Contextual Info: MMA690xQ Rev 2.0, 11/2010 Freescale Semiconductor Technical Data High Accuracy Low g Inertial Sensor MEMS Sensing, State Machine ASIC MMA690xQ The MMA690xQ is a dual axis, Low g, XY, Sensor based on Freescale’s HARMEMS technology, with an embedded DSP ASIC, allowing for additional

vanguard tcxo

Abstract: TCXO vanguard COSMO 1010 mccoy M55310 cosmo 1008 OCXO piezo c1555 MIL-PRF-55310 TCXO mtbf PX-369
Contextual Info: Space Products Space Products Vectron International Helping Customers Innovate, Improve & Grow World-Wide Locations United States VI Hudson, Corporate Headquarters 267 Lowell Road Hudson, NH 03051 Tel: 1.888.328.7661 Fax: 1.888.329.8328 * Military/Space Center of

Contextual Info: 21–23 GHz GaAs MMIC Medium Power Amplifier AA022P2-00 • Single Bias Supply Operation 6 V ■ 22 dBm Typical P1 dB Output Power at 23 GHz 3.268 Chip Outline 0.571 Features 1.700 1.572 1.576 ■ 14 dB Typical Small Signal Gain RF IN 0.850 ■ 0.25 µm Ti/Pd/Au Gates

0257S2

Contextual Info: AMD-K6-III Processor Data Sheet AMD Z\ D i 02575E5 QDLBE72 41fl B 1999 Advanced Micro Devices, Inc. A ll rig h ts reserv ed . The contents of this docum ent are provided in connection w ith A dvanced Micro D evices, Inc. "AMD" products. AMD m akes no representations or w arranties w ith

bdmr4101

Abstract: ev4101 tr4101
Contextual Info: LOGIC Tiny RISC EZ4102 EasyMACRO Microprocessor P relim inary Datasheet The TinyRISC™ EZ4102 EasyMACRO subsystem is a compact, highperformance, 32-bit MIPS microprocessor subsystem implemented in LSI Logic’s G11™ technology. The EZ4102 combines the TinyRISC CPU

Contextual Info: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN RFIN

41264

Abstract: 58779
Contextual Info: 20 -24 G H z G a A s M M IC Pow er Am plifier AA022P1-00 Features Chip Layout • Single Bias Supply Operation +6V ■ Broad Coverage of K -B and ■ 15 dB Small Signal Gain ■ 25.5 dBm Saturated Output Power at 23 G H z ■ 18% Power Added Efficiency at 23 GHz