ITRON SH OS Search Results

Common-cathode 7-segment LED display

Abstract: RCA-2N3053 7 segment displays cd4511 ci cd4511 CD4511 CD4511B CD4511B Types hewlet Wagner Electric ic cd4511
Contextual Info: HA RR IS S E n r C O N B S E CT OR 4 4E D 4302271 m ÜQ37574 ñ SH A S / - U HARRIS C D 4 5 1 1 B 7 T ypes C M O S BCD-to-7-Segment Latch Decoder Drivers 2 High-Voltage Types (20-Volt Rating) ' lO l/ g lJ M iS ib lT S W I I 2 3 4 5 6 ? 8 — e— A I C

TMPR3903AF

Abstract: TMPR3901AF-70 tlcs 9000 MIPS R3000A R3000A TX39 TMPR3904F Shenzhen Itron Electronics 404 MIPS TMPR3907F
Contextual Info: 32-Bit TX System RISC 32-Bit TX System RISC TX39 Family The TX39 high-performance RISC microprocessor family, designed for incorporation into systems, is a family of 32-bit original Toshiba processors based on the R3000A architecture designed by MIPS Technologies, Inc. Using the high-speed TX39/H version of the TX39 Core as

HI7000

Abstract: SH7708 SH7729R SH2-DSP programming manual
Contextual Info: HI Series OS Application Note Renesas Microcomputer Development Environment System Rev.1.00 2003.12.19 Rev. 1.00, 12/03, page ii of viii Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products

Contextual Info: MOTOROLA Order this document by MMDF2P02E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2P02E Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors DUAL TM OS MOSFET 2.5 AMPERES 25 VOLTS RDS on = 0.250 OHM MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

Contextual Info: MOTOROLA Order this document by MMSF2P02E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

Contextual Info: MOTOROLA Order this document by MMBV3401LT1/D SEMICONDUCTOR TECHNICAL DATA M M B V 3401LT1 Silicon Pin Diode Motorola Preferred Device T his de vice is d e sig ned p rim arily for V H F band sw itch ing ap plicatio ns but is also su ita b le fo r use in g e n e ra l-p u rp o s e sw itch ing circuits. S up plied in a S urface M ount

Transdimension

Abstract: itron SH OS pci 32 bit 5 v AD10 AD11 AD12 AD14 UHP112
Contextual Info: UHP112 Two-Port PCI-to-USB OpenHCI Host Controller - Product Brief Features Q Q Q Q Q Q 32-bit, 33 MHz PCI interface compliant with PCI Local Bus Specification Revision 2.1s Two downstream USB ports Full compliance with Universal Serial Bus Specification Revision 1.1

Contextual Info: MOTOROLA Order this document by MMFT3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055VL TM OS V N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is -

Contextual Info: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

Contextual Info: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate

MTD6N10E

Contextual Info: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD6N10E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM

TD4N20E

Contextual Info: MOTOROLA O rder this docum ent by M TD4N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD4N20E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 4.0 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TD1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N80E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

Contextual Info: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

MOTOROLA 3055V

Contextual Info: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3055V TMOS V Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTD15N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TM OS V Pow er Field E ffect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 15 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

d2955

Contextual Info: MOTOROLA O rder this docum ent by M TD2955E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2955E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e P-Channel Enhancement-Mode Silicon Gate

33N10E

Contextual Info: MOTOROLA O rder this docum ent by M TB33N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TD9N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

imsa-9032B

Abstract: iriso GU128X32-800A noritake electronics VFD ISE Electronics imsa-9032 GU128X32-800 gu128x32 NORITAKE ITRON VFD MODULES 96 x 23 D6X4
Contextual Info: Dot Graphic VFD Module □ □ □ □ □ □ □ G U 1 2 8 X 3 2 -8 0 0 The module includes the Vacuum Fluorescent Display glass, driver and control ASIC, with integral refresh Graphic RAM and logic for parallel and synchronous serial interfaces. The high speed 8 bit parallel interface is 5V

SH7034A

Abstract: AD9C Hitachi SH7034
Contextual Info: HITACHI H itachi S ingle-C hip RISC M icrocom puter S H 7 0 0 0 S e rie s SH 7032, SH 7034, SH 7020, S H 7 0 2 1 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document

Contextual Info: Section 1 H8S/2245 Series Features 1.1 H8S/2245 Series Functions H8S/2245 Series microcomputers are designed for faster instruction execution, using a realtime control oriented CPU with an internal 32bit architecture, and can run programs based on the C high-level language efficiently. As well as large-capacity ROM and RAM, these microcomputers