ITRON SH OS Search Results

20302

Abstract: EB 203 D 0G013M3
Contextual Info: 8 368602 SOLITRON DEVICES SOLITRON DEVICES INC D 61C 01343 INC t.1 SDM SDM SDM SDM 5 AMP FAST SWITCHING T-33-29 B E § a3tat,G2 0G013M3 4 M~~ miTiNpypsvicES SEMICONDUCTOR GROUP L>] r 20301 20302 20303 20304 N PN DARLBNGTON POWER TRANSISTORS Û % ñ p'.ä &

ali 3329

Abstract: ali m 3329 ISO1941-2 ali 3329 b Ali 3329 jtag KWP2000 ISO9141-2 mr-shpc-01 ISO1941 ali 3329 e
Contextual Info: パートナーベンダ ・クロスソフト／CASE ・シミュレータ ・ミドルウェア ・OS ・評価ボード ・エミュレータ ・プログラミングツール 注：会社名及び商品名は、各社の商標または登録商標です

Common-cathode 7-segment LED display

Abstract: RCA-2N3053 7 segment displays cd4511 ci cd4511 CD4511 CD4511B CD4511B Types hewlet Wagner Electric ic cd4511
Contextual Info: HA RR IS S E n r C O N B S E CT OR 4 4E D 4302271 m ÜQ37574 ñ SH A S / - U HARRIS C D 4 5 1 1 B 7 T ypes C M O S BCD-to-7-Segment Latch Decoder Drivers 2 High-Voltage Types (20-Volt Rating) ' lO l/ g lJ M iS ib lT S W I I 2 3 4 5 6 ? 8 — e— A I C

TMPR3903AF

Abstract: TMPR3901AF-70 tlcs 9000 MIPS R3000A R3000A TX39 TMPR3904F Shenzhen Itron Electronics 404 MIPS TMPR3907F
Contextual Info: 32-Bit TX System RISC 32-Bit TX System RISC TX39 Family The TX39 high-performance RISC microprocessor family, designed for incorporation into systems, is a family of 32-bit original Toshiba processors based on the R3000A architecture designed by MIPS Technologies, Inc. Using the high-speed TX39/H version of the TX39 Core as

HI7000

Abstract: SH7708 SH7729R SH2-DSP programming manual
Contextual Info: HI Series OS Application Note Renesas Microcomputer Development Environment System Rev.1.00 2003.12.19 Rev. 1.00, 12/03, page ii of viii Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products

Contextual Info: MOTOROLA Order this document by MMDF2P02E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2P02E Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors DUAL TM OS MOSFET 2.5 AMPERES 25 VOLTS RDS on = 0.250 OHM MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

Contextual Info: MOTOROLA Order this document by MMSF2P02E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

Contextual Info: MOTOROLA Order this document by MMBV3401LT1/D SEMICONDUCTOR TECHNICAL DATA M M B V 3401LT1 Silicon Pin Diode Motorola Preferred Device T his de vice is d e sig ned p rim arily for V H F band sw itch ing ap plicatio ns but is also su ita b le fo r use in g e n e ra l-p u rp o s e sw itch ing circuits. S up plied in a S urface M ount

Transdimension

Abstract: itron SH OS pci 32 bit 5 v AD10 AD11 AD12 AD14 UHP112
Contextual Info: UHP112 Two-Port PCI-to-USB OpenHCI Host Controller - Product Brief Features Q Q Q Q Q Q 32-bit, 33 MHz PCI interface compliant with PCI Local Bus Specification Revision 2.1s Two downstream USB ports Full compliance with Universal Serial Bus Specification Revision 1.1

Contextual Info: MOTOROLA Order this document by MMFT3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055VL TM OS V N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is -

Contextual Info: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

Contextual Info: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate

MTD6N10E

Contextual Info: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD6N10E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM

Contextual Info: MOTOROLA O rder this docum ent by M TD1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N80E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TD1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N60E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 600 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

Contextual Info: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

MOTOROLA 3055V

Contextual Info: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3055V TMOS V Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTD15N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TM OS V Pow er Field E ffect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 15 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTDF2N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTDF2N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which

Diod UG

Contextual Info: MOTOROLA Order this document by MMSF3205/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3205 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS on = 0.015 OHM

Contextual Info: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s

ITRON DC 205

Abstract: SF3305
Contextual Info: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8 AMPERES 30 VOLTS W aveFET devices are an advanced series of pow er M O SFETs