ITH13C06B Search Results

ITH13C06B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ITH13C06 Abstract: ITH13C06B T0220AB T0247 Contextual Info: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT S E M IC O N D U C T O R With Ultrafast Diode Supesedes O ctober 1998, version DS5045-1.2 The ITH13C 06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range	OCR Scan	ITH13C06 DS5045-1 DS5045-2 ITH13C06 T0263 T0268 T0220AB T0247 ITH13C06B T0220AB T0247	PDF
Contextual Info: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT SEMICONDUCTOR With Ultrafast Diode Supesedes March 1999, version DS5045-2.1 The IT H 1 3 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range	OCR Scan	ITH13C06 DS5045-3 DS5045-2	PDF

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ITH13C06

Abstract: ITH13C06B T0220AB T0247
Contextual Info: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT S E M IC O N D U C T O R With Ultrafast Diode Supesedes O ctober 1998, version DS5045-1.2 The ITH13C 06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range

OCR Scan

ITH13C06 DS5045-1 DS5045-2 ITH13C06 T0263 T0268 T0220AB T0247 ITH13C06B T0220AB T0247

PDF

Contextual Info: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT SEMICONDUCTOR With Ultrafast Diode Supesedes March 1999, version DS5045-2.1 The IT H 1 3 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range

OCR Scan

ITH13C06 DS5045-3 DS5045-2

PDF