IT15499 Search Results

Contextual Info: RD0106T Ordering number : ENA1704A SANYO Semiconductors DATA SHEET RD0106T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • High breakdown voltage VRRM=600V Low forward voltage (VF max=1.3V) Halogen free compliance

A1704

Contextual Info: RD0106T 注文コード No. N A 1 7 0 4 三洋半導体データシート N RD0106T シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・ 高耐圧である VRRM=600V 。 ・ 逆回復時間が速い。 ・ 順電圧が低い (VF max=1.3V)。

a1870

Abstract: a1870 fet marking a1870 FW513 TC-00002515
Contextual Info: FW513 Ordering number : ENA1870 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode FW513 General-Purpose Switching Device Applications Features • • • FET RDS on =5.8Ω (typ.), 10V drive FRD VF=1.1V (typ.), trr=40ns (typ.)

a1704

Contextual Info: RD0106T Ordering number : ENA1704 SANYO Semiconductors DATA SHEET RD0106T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . Fast reverse recovery time. Low forward voltage (VF max=1.3V).

Contextual Info: Ordering number : ENA1704A RD0106T Planar Ultrafast Rectifier http://onsemi.com Fast trr type, 1A, 600V, 50ns, TP/TP-FA Features • • • High breakdown voltage VRRM=600V Low forward voltage (VF max=1.3V) Halogen free compliance Fast reverse recovery time

a1704

Abstract: marking TP
Contextual Info: RD0106T Ordering number : ENA1704A SANYO Semiconductors DATA SHEET RD0106T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • High breakdown voltage VRRM=600V Low forward voltage (VF max=1.3V) Halogen free compliance