IT15179 Search Results

ATP108

Abstract: IT1518 ena1604
Contextual Info: ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

a1603

Abstract: ATP107
Contextual Info: ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET ATP107 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

a1712 mosfet

Abstract: A1712
Contextual Info: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •

Contextual Info: Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance

a1711

Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
Contextual Info: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

ATP113

Contextual Info: ATP113 Ordering number : ENA1755 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive • • Input Capacitance Ciss=2400pF(typ.) Halogen free compliance

Contextual Info: ATP107 Ordering number : ENA1603A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP107 General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive

ATP113

Contextual Info: ATP113 Ordering number : ENA1755A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.)

Contextual Info: ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET ATP107 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

Contextual Info: ATP113 Ordering number : ENA1755 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive • • Input Capacitance Ciss=2400pF(typ.) Halogen free compliance

ATP112

Contextual Info: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Input Capacitance Ciss=1450pF(typ.) Halogen free compliance

A1711

Contextual Info: Ordering number : ENA1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

Contextual Info: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive • • Input Capacitance Ciss=1450pF(typ.) Halogen free compliance

Contextual Info: Ordering number : ENA1603A ATP107 P-Channel Power MOSFET http://onsemi.com –40V, –50A, 17mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications

A1711

Abstract: ATP114 A17113 A1711-2 A1711-3
Contextual Info: ATP114 注文コード No. N A 1 7 1 1 三洋半導体データシート N ATP114 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=12mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4000pF(typ.)

A1712

Abstract: a1712 mosfet
Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)

Contextual Info: ATP108 Ordering number : ENA1604A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP108 General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive

a1712

Abstract: a1712 mosfet a1712-1 ENA1712
Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance

Contextual Info: ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

a1712 mosfet

Abstract: A1712
Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)

Contextual Info: Ordering number : ENA1604A ATP108 P-Channel Power MOSFET http://onsemi.com –40V, –70A, 10.4mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications

A1755

Abstract: ATP113 ATPAK
Contextual Info: ATP113 注文コード No. N A 1 7 5 5 三洋半導体データシート N ATP113 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=22.5mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=2400pF(typ.)

M4563

Abstract: ATP112
Contextual Info: ATP112 注文コード No. N A 1 7 5 4 三洋半導体データシート N ATP112 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=33mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=1450pF(typ.)

a1712

Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance