IT09554 Search Results
IT09554 Datasheets Context Search
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Contextual Info: Ordering number : ENA1055B SBE807 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR Applications • High frequency rectification switching regulators, converters, and choppers Features • Low switching noise • Low reverse current (VR=16V, IR max=15µA) |
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ena1055bsbe807a1055-4/4 | |
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Contextual Info: CPH5871 Ordering number : ENA1401A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5871 General-Purpose Switching Device Applications Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package |
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cph5871ena1401aa1401-7/7 | |
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Contextual Info: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15µA) |
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sbe807ena1055aa1055-6/6 | |
A1055Contextual Info: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15 A) |
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ena1055asbe807017a-001sbe807-tl-e+2 | |
SBE807Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A). |
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sbe807ena1055125formationa1055-3/3 | |
CPH5852
Abstract: MCH3312 SB1003M3 A0336-3
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cph5852mch3312sb1003m3600mm2+5 | |
CPH5854
Abstract: MCH3312 SB1003M3 A0516
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cph5854mch3312sb1003m3600mm2+5 | |
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Contextual Info: SB1003M3 Ordering number : EN8375A SANYO Semiconductors DATA SHEET SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure |
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sb1003m3en8375a | |
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Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A). |
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sbe807ena1055a1055-3/3 | |
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Contextual Info: Ordering number : ENA8375B SB1003M3 Schottky Barrier Diode 30V, 1A, Low IR, Single MCPH3 http://onsemi.com Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure |
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ena8375bsb1003m3 | |
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Contextual Info: SB1003M3 Ordering number : ENN8375 SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. |
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sb1003m3enn8375 | |
ta 8375
Abstract: SB1003M3
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sb1003m3enn8375ta 8375 | |
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Contextual Info: Ordering number : ENA1055A SBE807 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR, Non-Monolithic Dual CPH5 Common Cathode Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise |
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ena1055asbe807a1055-6/6 | |
82306
Abstract: MCH3312 CPH5852 SB1003M3
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cph5852ena0336mch3312sb1003m3+2 | |
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Contextual Info: Ordering number : ENA1401A CPH5871 N-Channel Power MOSFET 30V, 3.5A, 52mΩ, Single CPH5 with Schottky Diode http://onsemi.com Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting |
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ena1401acph5871a1401-7/7 | |
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Contextual Info: CPH5871 Ordering number : ENA1401 SANYO Semiconductors DATA SHEET CPH5871 Features • • • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package |
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cph5871ena1401a1401-5/5 | |
A1401
Abstract: IT09556 A1401-5
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cph5871600mm212809petc-00001794+6 | |
MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
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cph5854ena0516mch3312sb1003m3+3 | |
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Contextual Info: Ordering number : EN8375A SB1003M3 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR, Single MCPH3 Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure |
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en8375asb1003m3 | |
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Contextual Info: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A). |
Original |
sbe807ena1055a1055-3/3 | |
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Contextual Info: SB1003M3 Ordering number : EN8375A SANYO Semiconductors DATA SHEET SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low leakage current and high reliability due to highly reliable planar structure |
Original |
en8375asb1003m3 | |
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Contextual Info: SB1003M3 Ordering number : ENN8375 SB1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. |
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enn8375sb1003m3 | |
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Contextual Info: CPH5871 Ordering number : ENA1401A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5871 General-Purpose Switching Device Applications Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package |
Original |
cph5871ena1401aa1401-7/7 | |