IT08758 Search Results

Contextual Info: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

2SJ665

Contextual Info: 2SJ665 Ordering number : EN8590 P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ661

Contextual Info: 2SJ661 Ordering number : EN8586 P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ661

Abstract: D100003
Contextual Info: 2SJ661 注文コード No. N 8 5 8 6 三洋半導体データシート N 2SJ661 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。

Contextual Info: 2SJ661 Ordering number : EN8586A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications

Contextual Info: 2SJ665 Ordering number : EN8590A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive Input capacitance Ciss=4200pF (typ.) • Specifications

J665

Abstract: 75350-01
Contextual Info: 2SJ665 Ordering number : EN8590A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive Input capacitance Ciss=4200pF (typ.) • Specifications

Contextual Info: Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET http://onsemi.com –100V, –27A, 77mΩ, TO-263-2L Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C