IT08735 Search Results

2SJ666

Abstract: IT08805
Contextual Info: 2SJ666 Ordering number : EN8591 P-Channel Silicon MOSFET 2SJ666 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ664

Contextual Info: 2SJ664 Ordering number : EN8589 P-Channel Silicon MOSFET 2SJ664 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

Contextual Info: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

2SJ665

Contextual Info: 2SJ665 Ordering number : EN8590 P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ663

Abstract: IT08775
Contextual Info: 2SJ663 Ordering number : EN8588 P-Channel Silicon MOSFET 2SJ663 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ661

Contextual Info: 2SJ661 Ordering number : EN8586 P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ661

Abstract: D100003
Contextual Info: 2SJ661 注文コード No. N 8 5 8 6 三洋半導体データシート N 2SJ661 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。

2SJ660

Abstract: J660
Contextual Info: 2SJ660 注文コード No. N 8 5 8 5 三洋半導体データシート N 2SJ660 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。

Contextual Info: 2SJ661 Ordering number : EN8586A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications

2SJ659

Contextual Info: 2SJ659 Ordering number : EN8584A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ659 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.

2SJ660

Contextual Info: 2SJ660 Ordering number : EN8585 P-Channel Silicon MOSFET 2SJ660 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ662

Abstract: IT08765
Contextual Info: 2SJ662 Ordering number : EN8587 P-Channel Silicon MOSFET 2SJ662 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SJ659

Abstract: J659 IT08728
Contextual Info: 2SJ659 注文コード No. N 8 5 8 4 A 三洋半導体データシート 半導体データシート No.N8584 をさしかえてください。 2SJ659 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

J659

Contextual Info: 2SJ659 Ordering number : EN8584 P-Channel Silicon MOSFET 2SJ659 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.