CPH5617
Abstract: MARKING FZ TA-3722
Contextual Info: CPH5617 Ordering number : EN7370A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH5617 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly.
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TA3722
Abstract: marking FZ TA-3722 CPH5617 pgd250 TA-372
Contextual Info: Ordering number : ENN7370 CPH5617 N-Channel Silicon MOSFET CPH5617 Ultrahigh-Speed Switching Applications • unit : mm 2168 [CPH5617] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the
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TA-372
Abstract: TA-3722 IC 2 5/TA3722
Contextual Info: CPH5617 Ordering number : EN7370B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH5617 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly
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TA1990
Abstract: 6545 marking YA
Contextual Info: Ordering number : ENN6545 3LN01SP N-Channel Silicon MOSFET 3LN01SP Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2180 [3LN01SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4
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TA-3722
Abstract: TA3722 TA-372
Contextual Info: Ordering number : EN7370C CPH5617 N-Channel Power MOSFET http://onsemi.com 30V, 150mA, 3.7Ω, Dual CPH5 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly
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TA3722
Abstract: TA-3722 CPH5617
Contextual Info: CPH5617 注文コード No. N 7 3 7 0 A 三洋半導体データシート 半導体データシート No.N7370 をさしかえてください。 CPH5617 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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TA1990
Abstract: 3LN01SP IT00031
Contextual Info: 注文コード No. N 6 5 4 5 3LN01SP No. N 6 5 4 5 52200 新 3LN01SP 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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VEC2901
Contextual Info: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
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VEC2901
Abstract: id 6ma vgs 8v mosfet
Contextual Info: VEC2901 注文コード No. N 8 1 9 8 三洋半導体データシート N VEC2901 NPN エピタキシァルプレーナ形シリコントランジスタ N チャネル MOS 形シリコン電界効果トランジスタ スイッチング用フラッシュ用
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