IT00 Search Results

Contextual Info: Ordering number : ENN6646 P-Channel Silicon MOSFET 3LP01N Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2178 • 2.5V drive. Specifications Absolute Maximum Ratings at T a=25°C

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: Ordering number : ENA0408A SB02-09C Schottky Barrier Diode http://onsemi.com 90V, 0.2A, Low IR, Single CP Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=10ns)

Contextual Info: Ordering number : ENA0407A SB01-15C Schottky Barrier Diode http://onsemi.com 150V, 0.1A, Low IR, Single CP Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=10ns)

Contextual Info: Ordering number : EN6343A SBE002 Schottky Barrier Diode http://onsemi.com 50V, 1A, Low IR, Single CPH6 Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • • Low forward voltage (VF max=0.55V)

K2632

Abstract: 2SK2632LS 2SK2632 TA-2380 K263 TO-220FI-LS
Contextual Info: 注文コード No. N 5 5 3 1 B 2SK2632LS No. N 5 5 3 1 B N2000 新 半導体ニューズ No.N5531A とさしかえてください。 2SK2632LS 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。

SBS004M

Abstract: marking SA
Contextual Info: Ordering number : ENN6907 SBS004M Schottky Barrier Diode SBS004M 15V, 1A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1305 0.15 1 2.1 3 1.6 • 0.3 Low forward voltage (IF=0.5A, VF max=0.35V)

6914

Abstract: 2044B 2SA2043 2SC5709 IT00171
Contextual Info: Ordering number : ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2043 / 2SC5709]

KT 505

Abstract: SVC348
Contextual Info: Ordering number:ENN6263A Hyper-Abrupt Junction Type Silicon Composite Varactor SVC348 AM Low Voltage Electronic Tuning Applications Features Package Dimensions unit:mm 1292 [SVC348] 2.2 4.0 3.0 • Twin type varactor diode for AM electronic tuning use. · High capacitance ratio and high quality factor.

power control 62613

Abstract: TA75107 1SV315 ENN6261
Contextual Info: Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Package Dimensions unit:mm 1246A [1SV315] 0.425 • Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller.

it-007

Abstract: CPH5605 IT01080
Contextual Info: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON

SBS804

Abstract: ENN6595 SBS004
Contextual Info: Ordering number : ENN6595 SBS804 Schottky Barrier Diode SBS804 15V, 1A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1294 [SBS804] • 0.6 2.8 0.05 2 0.95 0.4 0.7 4 0.15 3

2SA2015

Abstract: 2SA20 IT00202 2SC5568
Contextual Info: Ordering number:ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568] · Adoption of MBIT processes.

2SJ560

Abstract: CPH6801 SBS004 TA2492
Contextual Info: Ordering number:EN6419 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH6801 DC/DC Converter Applications Package Dimensions unit:mm 2172 [CPH6801] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.05 0.6 • The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier

2sc5706

Abstract: 2SC5706 equivalent 2SA2039 transistor 2sa2039 ENN6912 2044B 2sc5706 equivalent transistor 2sc5706 transistor VR10
Contextual Info: Ordering number : ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B

SBS004

Abstract: 62722
Contextual Info: Ordering number:ENN6272 Schottky Barrier Diode SBS004 15V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1293 [SBS004] 2.9 · Low forward voltage (IF=0.5A, VF max=0.35V) (IF=1.0A, VF max=0.4V).

Contextual Info: Section 1 H8S/2245 Series Features 1.1 H8S/2245 Series Functions H8S/2245 Series microcomputers are designed for faster instruction execution, using a realtime control oriented CPU with an internal 32bit architecture, and can run programs based on the C high-level language efficiently. As well as large-capacity ROM and RAM, these microcomputers

transistor zo 607

Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).

Contextual Info: SVC203C Ordering number : EN2195H Diffused Junction Type Silicon Diode SVC203C Varactor Diode for FM Low-Voltage Electronic Tuning Use Features • • • Dual type with a good linearity of C-V characteristic. Excels in large input characteristics. Small-sized package CP usable in ultrasmall-sized sets (surface mount type).

CPH5617

Abstract: MARKING FZ TA-3722
Contextual Info: CPH5617 Ordering number : EN7370A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH5617 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly.

Contextual Info: 5LN01M Ordering number : EN6137A 5LN01M N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
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TA-3264

Abstract: ENN6973
Contextual Info: Ordering number : ENN6973 MCH6618 N-Channel and P-Channel Silicon MOSFETs MCH6618 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6618] 0.3 4 5 6 3 2 0.65 1 0.15 0.25 0.07 The MCH6618 encapsulates an N-channel MOSFET and a P-channel MOSFET that feature low

Contextual Info: Ordering number : ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 [5LP01N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5