ISD 2100 Search Results

ISD-9200

Abstract: ISD-9201
Contextual Info: ISD-9200 Series SPDT Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough

isd 2100

Contextual Info: ISD-9900 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough

ISD-9110

Abstract: ISD-9111 ISD-9112
Contextual Info: ISD-9110 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough

ALCATEL 2840

Abstract: zkb* vac 2840 alcatel lts 543 series pin diagram 3AK7 alcatel sic alcatel ilc 0.5 MIETEC CMOS D1LF f0-250
Contextual Info: M T C - 2 0 1 7 2 'S' Interface Circuit for ISD N SIC Data Sheet & Reference Manual Rev. 1.0 August 1996 Application Specific Standard Products Fe atu re s • Single chip 4 w ire So-interface for ISDN • Basic access at 144 kbits/s, with 2B+D • Com plying with CCITT 1.430

IRFP90N20DPBF

Abstract: 035H AN1001 IRFPE30 irfp90n20d
Contextual Info: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Irfp90n20d

Abstract: 035H AN1001 IRFPE30 IRFP90N20DPbF irfp90n20
Contextual Info: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

STY140NS10

Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™

Contextual Info: PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

STY140NS10

Abstract: MAX247 D140A
Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY

STY140NS10

Abstract: Max247TM MAX247
Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™

721a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N95 Power MOSFET 9A, 950V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

Contextual Info: LTC3453 Synchronous Buck-Boost High Power White LED Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 3453 is a synchronous buck-boost DC/DC converter optimized for driving up to 4 white LEDs at a combined current of up to 500mA from a single Li-Ion

high power white led driver circuit diagram

Abstract: nichia NSCW100 LED power INDUCTOR tdk BOBBIN white led driver IDCS-2512 LTC3453 LTC3453EUF MBRM120T3 MO-220
Contextual Info: LTC3453 Synchronous Buck-Boost High Power White LED Driver U FEATURES DESCRIPTIO • The LTC 3453 is a synchronous buck-boost DC/DC converter optimized for driving up to 4 white LEDs at a combined current of up to 500mA from a single Li-Ion battery input. The regulator operates in either synchronous buck, synchronous boost, or buck-boost mode,

24NM60N

Abstract: IPAK
Contextual Info: STFI24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features Order code VDSS @Tjmax RDS(on) max. ID STFI24NM60N 650 V < 0.19 Ω 17 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance

9N90

Abstract: 0408 G Diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

STW9NB80

Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

035H

Abstract: IRFPE30 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use

MOSFET 800V 3A

Abstract: STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram
Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V < 1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 9N95 Power MOSFET 9 A, 9 5 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

Contextual Info: STFI24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Order code VDSS @Tjmax RDS(on) max. ID STFI24NM60N 650 V < 0.19 Ω 17 A • Fully insulated and low profile package with increased creepage path from pin to heatsink

irfp90n20

Abstract: irfp90n20d AN1001
Contextual Info: PD - 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

Contextual Info: PD - 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on max ID 200V 0.023Ω 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

f3nk80z

Abstract: P3NK80Z D3NK80Z STP3NK80Z f3nk80z DATA STD3NK80ZT4 STD3NK80Z STD3NK80Z-1 STF3NK80Z d3nk
Contextual Info: STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800