IRHQ Search Results

IRHQ57214SE

Contextual Info: PD-93881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57214SE 250V, QUAD N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A LCC-28 International Rectifier’s R5TM technology provides

Contextual Info: PD-94210A IRHQ597110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 100V, Quad P-CHANNEL RAD-Hard HEXFET 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ597110 100K Rads (Si) 0.96Ω IRHQ593110 300K Rads (Si) 0.98Ω

Contextual Info: PD-94211D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57110 100V, Quad N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHQ57110 Radiation Level RDS(on) 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω 4.6A IRHQ54110 500K Rads (Si)

SMD 7150

Abstract: 57034 57Z30 IRHN SMD23 7130
Contextual Info: Rad Hard MOSFET Reference Guide NEW Mega Rad Product Matrix IRHNJ SMD-.5 IRHF TO39 IRH TO3 IRHM TO254 IRHG IRHQ MO036AB LCC 28 HEX BVDSS VOLTS 1 100 1 100 7110 1 200 7210 1 250 3 30 57Z30* 57Z30* 57Z30* 57Z30* 3 60 57034* 57034* 57034* 57034* 3 100 57130*

IRHQ57214SE

Contextual Info: PD - 93881A RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57214SE 250V, QUAD N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A LCC-28 International Rectifier’s R5TM technology provides

IRHQ563110

Abstract: IRHQ567110
Contextual Info: PD - 94057 IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω

IRHQ593110

Abstract: IRHQ597110
Contextual Info: PD-94210A IRHQ597110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 100V, Quad P-CHANNEL RAD-Hard HEXFET 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ597110 100K Rads (Si) 0.96Ω IRHQ593110 300K Rads (Si) 0.98Ω

IRF P-Channel FET 100v

Abstract: HEXFETs FETs 100v 23A P-Channel MOSFET IRF P CHANNEL MOSFET 10A 100V IRHQ6110 IRHQ63110
Contextual Info: PD - 91781 IRHQ6110 IRHQ63110 COMBINATION N AND P CHANNEL 2 EACH MEGA RAD HARD HEXFET TRANSISTORS Ω (N channel ) MEGA RAD HARD HEXFET 100 Volt, 0.38Ω Ω (P channel ) RAD HARD HEXFET and -100 Volt, 0.88Ω International Rectifier’s MEGA RADHARD Technology

PD937

Contextual Info: PD-93785B RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ7110 100V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 300K Rads (Si) RDS(on) 0.6Ω 0.6Ω ID 3.0A

Contextual Info: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω

IRHQ57214SE

Abstract: IRHQ
Contextual Info: PD - 93881B RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57214SE 250V, QUAD N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A LCC-28 International Rectifier’s R5TM technology provides

IRHQ9110

Abstract: IRHQ93110
Contextual Info: PD - 93794A RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ9110 100V, QUAD P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K Rads (Si) RDS(on) 1.1Ω 1.1Ω ID

IRHQ563110

Abstract: IRHQ567110
Contextual Info: PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω

Contextual Info: PD-94211B IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 100V, Quad N-CHANNEL RAD-Hard HEXFET 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ57110 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω

IRHQ3214

Abstract: IRHQ4214 IRHQ7214 IRHQ8214
Contextual Info: PD - 93828 IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 250V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7214 100K Rads (Si) RDS(on) 2.25Ω ID 1.6A IRHQ3214 300K Rads (Si) 2.25Ω

IRHQ593110

Abstract: IRHQ597110
Contextual Info: PD - 94210 IRHQ597110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 100V, Quad P-CHANNEL RAD-Hard HEXFET 4# TECHNOLOGY Product Summary Part Number Radiation Level IRHQ597110 100K Rads (Si) IRHQ593110 300K Rads (Si) RDS(on) 0.96Ω 0.98Ω

IRHQ53110

Abstract: IRHQ54110 IRHQ57110 IRHQ58110
Contextual Info: PD - 94211 IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 100V, Quad N-CHANNEL RAD-Hard HEXFET 4# TECHNOLOGY Product Summary Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 300K Rads (Si) IRHQ54110 600K Rads (Si) IRHQ58110 1000K Rads (Si)

IRHQ3214

Abstract: IRHQ4214 IRHQ7214 IRHQ8214
Contextual Info: PD - 93828A IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 250V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7214 100K Rads (Si) IRHQ3214 300K Rads (Si) RDS(on) 2.25Ω 2.25Ω ID

Contextual Info: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω

Contextual Info: PD - 93831 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57214SE 250V, QUAD N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A LCC-28 International Rectifier’s R5TM technology provides

Contextual Info: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω

Contextual Info: PSD413F Family Figure 33. Read Timing tAVLX _ tLXAX \ / - ALE/AS tLVLX A/D MULTIPLEXED BUS ADDRESS VALID DATA VALID tAVQV ADDRESS NON-MULTIPLEXED BUS \ r yz ADDRESS VALID DATA NON-MULTIPLEXED BUS & DATA VALID tSLQV tRLQV IRHQX «RLRH _RD PSEN, DS

IRF FET

Abstract: LCC28 7105 7105 fet LCC-28
Contextual Info: IRHQ7110 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by ➄ Total Dose Irradiation with VGS Bias. maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 18.7mH, Peak IL = 3.0A, VGS = 12V ➂ ISD ≤ 3.0A, di/dt ≤ 165A/µs,

IRHQ9110

Abstract: IRHQ93110
Contextual Info: PD - 93794 IRHQ9110 100V, 4P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K Rads (Si) RDS(on) 1.1Ω 1.1Ω ID -2.3A