IRFY9140 Search Results

IRFY9140X

Contextual Info: IRFY9140X Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 15.8A RDS(ON) = 0.2Ω Ω 1.0 (0.039)

IRFY9140

Abstract: SHD225409
Contextual Info: SENSITRON SEMICONDUCTOR SHD225409 TECHNICAL DATA DATA SHEET 871, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Hermetic Metal Package œ Fast Switching œ Electrically Equivalent to IRFY9140 Series MAXIMUM RATINGS

TRANSISTORS sec 537

Contextual Info: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

IRFY9140C

Contextual Info: IRFY9140C MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) VDSS ID(cont) RDS(on) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)

Contextual Info: mi =Vr= INI SEM E IRFY9140C LAB MECHANICAL DATA P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 . 8 3 (0 .1 9 0 ) V DSS -1 0 0 V -1 2 A ^D(cont) 0.21ft ^D S (on) FEATURES • HERMETICALLY SEALED TO -257AA METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS

IRFY9140C

Abstract: IRFY9140CM
Contextual Info: PD - 91294C POWER MOSFET THRU-HOLE TO-257AA IRFY9140C IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

IRFY9140

Abstract: SHD226409
Contextual Info: SENSITRON SEMICONDUCTOR SHD226409 TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • -100 Volt, 0.21 Ohm, -13A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Equivalent to IRFY9140 Series MAXIMUM RATINGS

P-channel power mosfet irf

Abstract: IRF P CHANNEL MOSFET 10A 100V IRFY9140 IRFY9140C IRFY9140CM IRFY9140M 150-TRt
Contextual Info: PD - 94197 POWER MOSFET THRU-HOLE TO-257AA IRFY9140,IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

IRFY9140

Abstract: IRFY9140C IRFY9140CM IRFY9140M N- and P-Channel 30-V D-S MOSFET
Contextual Info: PD - 94197A POWER MOSFET THRU-HOLE TO-257AA IRFY9140,IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

max6013

Contextual Info: SENSITRON SEMICONDUCTOR SHD226409 TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Equivalent to IRFY9140 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: PD - 94197B POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

HEXFET Power MOSFET P-Channel

Abstract: IRFY9140C IRFY9140CM
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Contextual Info: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

Contextual Info: IRFY9140 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D)8.2 @Temp (øC)100# IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55

Contextual Info: SENSITRON SEMICONDUCTOR SHD225409 TECHNICAL DATA DATA SHEET 871, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Hermetic Metal Package œ Fast Switching œ Electrically Equivalent to IRFY9140 Series MAXIMUM RATINGS

Contextual Info: I . ,• I Provisional Datasheet No. PD 9.1294A International IGR Rectifier IRFY9140CM HEXFET8 POWER MOSFET P-CHANNEL -100 Volt, 0.2£2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­

IRFY9140

Contextual Info: IRFY9140 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 -100V -13A Ω 0.21Ω FEATURES

P-channel power mosfet irf

Abstract: IRF P CHANNEL MOSFET 10A 100V IRFY9140C IRFY9140CM
Contextual Info: PD - 91294B POWER MOSFET THRU-HOLE TO-257AA IRFY9140C,IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9140C 0.20 Ω -15.8A Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

IRF P CHANNEL MOSFET 10A 100V

Abstract: SEC IRF 640 IRFY9140 IRFY9140C IRFY9140CM IRFY9140M
Contextual Info: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

IRFY9140

Abstract: SHD226409
Contextual Info: SENSITRON SEMICONDUCTOR SHD226409 TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Equivalent to IRFY9140 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

IRFY9140C

Abstract: IRFY9140CM
Contextual Info: Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Contextual Info: IRFY9140M Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number