IRFS9542 Search Results

Contextual Info: P-CHANNEL POWER MOSFETS IRFS9540/9541 /9542/9543 FEATURES • • • • • • • Lower Ros ON Improved inductive ru g g e d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRFS9620

Abstract: IRFS9522 SSS6N60 IRFS820
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

1RFS9630

Abstract: IRFS9140 IRFS9630 1RFS840 IRFS841 IRFS842 IRFS9130 IRFS9131 IRFS9132 IRFS9133
Contextual Info: 306 - - T a = 2 5 cC f m % tt Vd s or £ Vg s Id Pd 'S Ig s s * /CH * /CH ÍA) (W) Vg s (V) 14 % tos(on) Vd s = (Ta=25°C) I d (o o ) g fs Ciss Coss Crss (V) (nA) (V) ( M A) Vd s (V) min max (V) (V) (nax) Id l.mA) ft B m % V g s =0 Vg s Vd g )/ V g s Cth)

Contextual Info: SAM S UN G E L E C T R O N I C S INC b4E Í • 7^4142 0 0 1 2 41 5 TEO ■ SM6K P-CHANNEL POWER MOSFETS IRFS9540/9541/9542/9543 FEATURES • • • • • • • Lower R d s o n > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure