IRFR120 MOTOR Search Results

ME9P06E-F

Abstract: MTD4N18 mtd8p me12n06
Contextual Info: N & P CHANNEL POWER MOSFETS N CHANNEL ENHANCEMENT MODE D PAK Outline Equivalents Part Number Int. Rectifier Motorola ME13N06EF IRFR024 – ME12N06ELF † IRLR024 – ME8N06EF * IRFR014 MTD8N06E ME6N10F IRFR120 MTD5N05/06/10 ME4N20F IRFR220 MTD4N18/20 *: Avalanche Rated

IRFR120

Abstract: IRFU120 TB334
Contextual Info: [ /Title IRFR 120, IRFU1 20 /Subject (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO251AA , TO252AA IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel

ifr120

Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRFU120

Abstract: IRFR120 motor IRFR120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRFR120, IRFU120 Semiconductor Ju ly 1999 D ata S h eet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFR7740

Contextual Info: StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application • Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: StrongIRFET IRFR7746PbF IRFU7746PbF HEXFET Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application • Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: IRFR825TRPBF VDSS RDS on typ. Trr typ. Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications 500V ID 92ns 1.05Ω 6.0A D-Pak IRFR825TRPBF Features and Benefits • Fast body diode eliminates the need for external

Contextual Info: PD - 96433A IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external

irfR825

Abstract: MAX1783 101NS irfr825PBF
Contextual Info: PD - 96433 IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external

Contextual Info: PD -97773 IRFR812TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V Parameter 75ns 1.85Ω 3.6A D Features and Benefits • Fast body diode eliminates the need for external

AN-994

Abstract: IRFR120 IRFR3412 IRFU3412 U120 power MOSFET IRF data
Contextual Info: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: PD - 96433 IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external

IRFU3412

Abstract: AN-994 IRFR120 IRFR3412 U120 irf 064 power MOSFET IRF data
Contextual Info: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

IFU120

Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
Contextual Info: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN

AN-994

Abstract: EIA-541 IRFR120 97003
Contextual Info: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

IRFR7446PBF

Contextual Info: StrongIRFET™ IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies

AN-994

Abstract: EIA-541 IRFR120
Contextual Info: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

Contextual Info: StrongIRFET™ IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies

Contextual Info: IRFR7440PbF IRFR7440PBF IRFR7440TRPBF IRFU7440PbF IRFU7440PBF Applications Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications