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    IRFP250 M Search Results

    IRFP250 M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SN55LVDS31W
    Texas Instruments Quad LVDS Transmitter 16-CFP -55 to 125 Visit Texas Instruments
    SNJ55LVDS32FK
    Texas Instruments Quad LVDS Receiver 20-LCCC -55 to 125 Visit Texas Instruments Buy
    V62/06677-01XE
    Texas Instruments Enhanced Product 10:1 Lvds Serdes Transmitter 100-660 Mbps 28-SSOP -55 to 125 Visit Texas Instruments Buy
    SN65LVDM176DGKG4
    Texas Instruments Half-Duplex LVDM Transceiver 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    SN65LVDM31DG4
    Texas Instruments Quad LVDM Driver 16-SOIC -40 to 85 Visit Texas Instruments Buy

    IRFP250 M Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRFP250MPBF
    International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 30A TO-247AC Original PDF 8
    SF Impression Pixel

    IRFP250 M Price and Stock

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    Infineon Technologies AG IRFP250MPBF

    MOSFET N-CH 200V 30A TO247AC
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    DigiKey IRFP250MPBF Tube 1,374 1
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    Avnet Americas () IRFP250MPBF Bulk 1
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    IRFP250MPBF Tube 18 Weeks 800
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    Mouser Electronics IRFP250MPBF 4,455
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    Verical IRFP250MPBF 2,025 9
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    Newark IRFP250MPBF Bulk 9,047 1
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    RS IRFP250MPBF Bulk 5
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    TME IRFP250MPBF 365 1
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    Ameya Holding Limited IRFP250MPBF 1,200
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    Chip Stock IRFP250MPBF 11,500
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    EBV Elektronik IRFP250MPBF 19 Weeks 400
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    IBS Electronics IRFP250MPBF 800
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    Maritex IRFP250MPBF 7,211 1
    • 1 $2.64
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    Win Source Electronics IRFP250MPBF 10,000
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    International Rectifier IRFP250MPBF

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    IRFP250 M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TA9295

    Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
    Contextual Info: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


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    IRFP250 TB334 O-247 TA9295 irfp250 applications IRFP250 TB334 transistor IRFP250 PDF

    IRFP250

    Abstract: irfp250 applications
    Contextual Info: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    IRFP250 O-247 IRFP250 irfp250 applications PDF

    IRFP250

    Abstract: irfp250 applications irfp250 mosfet NOR gate
    Contextual Info: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    IRFP250 O-247 IRFP250 irfp250 applications irfp250 mosfet NOR gate PDF

    IRFP250

    Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
    Contextual Info: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan
    IRFP250, IRFP251, IRFP252, IRFP253 IRFP253 75BVdss IRFP250 irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 PDF

    Contextual Info: N-CHANNEL POWER MOSFETS IRFP250/251 FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    IRFP250/251 IRFP250 IRFP251 PDF

    IRFP250

    Abstract: irfp250 applications IRFP250PBF
    Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    IRFP250, SiHFP250 O-247 O-220 IRFP250 irfp250 applications IRFP250PBF PDF

    irfp250m

    Abstract: IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511
    Contextual Info: ?“R Rectifier IRFP250 HEXFET Power M O S FE T • • • • • • I N T E R NA T I O NA L RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss bSE


    OCR Scan
    IRFP250 O-247 T0-220 O-218 50Ktl irfp250m IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511 PDF

    Contextual Info: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient


    OCR Scan
    IRFP250 O-247 PDF

    IRFP250 m

    Abstract: AX-3019 IRFP250 ax3019 Q2102 International Rectifier PD-9.443D
    Contextual Info: International Iran Rectifier 4ûS5H Sa G 0 1 5 itfl4 •IN R QSS PD-9.443D IRFP250 IN T E R N A T IO N A L HEXFET P o w e r M O S F E T R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


    OCR Scan
    IRFP250 IRFP250 m AX-3019 IRFP250 ax3019 Q2102 International Rectifier PD-9.443D PDF

    IRFP250

    Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
    Contextual Info: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


    OCR Scan
    IRFP250/251/252/253 IRF250/251/252/253 IRFP250/IRF250 IRFP251 /IRF251 IRFP252/IRF252 IRFP253/IRF253 IRFP250 IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET PDF

    1RFP240

    Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
    Contextual Info: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)


    OCR Scan
    IRFP232 1RFP233 1RFP240 IRFP241 IRFP242 IRFP243 1RFP330 IRFP331 1RFP332 IRFP333 IRFP310 T03P irfp250 irfp320 IRFP323 n4001 PDF

    Irfp250 irfp460

    Abstract: FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3
    Contextual Info: Discrete MOSFETs TO-247 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-247 N-Channel HUF75345G3 55 Single 0.007 - - - 125 75 325 HUFA75345G3 55 Single 0.007 - - - 125


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    O-247 O-247 HUF75345G3 HUFA75345G3 HUF75344G3 HUFA75344G3 HUF75343G3 HUFA75343G3 HUF75339G3 HUFA75339G3 Irfp250 irfp460 FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3 PDF

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


    OCR Scan
    O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE PDF

    irf250 dc motor

    Abstract: IRF250 ic data
    Contextual Info: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a


    OCR Scan
    IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/IRFP253 IRF254/IRFP254 IRFC250 irf250 dc motor IRF250 ic data PDF

    Contextual Info: PD-91796A HFA40HF60C Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 1.56V Qrr = 270nC di rec M/dt = 345A/µs Description


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    PD-91796A HFA40HF60C 270nC PDF

    smd DIODE 44A

    Contextual Info: PD-20381B HFA40HF60 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 1.75V Qrr = 290nC di rec M/dt = 400A/µs Description


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    PD-20381B HFA40HF60 290nC smd DIODE 44A PDF

    Contextual Info: PD-97803A HFB60HNX20 Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced RFI and EMI Extensive Characterization of Recovery Parameters Hermetic Surface Mount ESD Rating: Class 3B per MIL-STD-750, Method 1020 VR = 200V


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    PD-97803A HFB60HNX20 MIL-STD-750, PDF

    Contextual Info: Bulletin PD-20744 rev. B 02/06 150EBU04 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Screw Mounting Only • Lead-Free Plating trr = 60ns IF AV = 150Amp VR = 400V Benefits • Reduced RFI and EMI


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    PD-20744 150EBU04 150Amp PDF

    80EBU04

    Abstract: IRFP250
    Contextual Info: Bulletin PD-20742 rev. C 02/06 80EBU04 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Screw Mounting Only • Lead-Free Plating trr = 50ns typ IF(AV) = 80Amp VR = 400V Benefits • Reduced RFI and EMI


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    PD-20742 80EBU04 80Amp 80EBU04 IRFP250 PDF

    Irfp450

    Contextual Info: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability


    OCR Scan
    IRFP450/451/452/453 IRFP250 IRFP251 IRFP252 IRFP253 IRFP450 IRFP451 OOGS43S Irfp450 PDF

    SOT-227 Package

    Abstract: IRFP250 UFB200FA40
    Contextual Info: Bulletin PD-20486 rev. C 10/02 UFB200FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape


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    PD-20486 UFB200FA40 OT-227 UFB200FA40 SOT-227 Package IRFP250 PDF

    HFA120FA60

    Abstract: IRFP250
    Contextual Info: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features • • • • Fast Recovery time characteristic


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    HFA120FA60 270nC OT-227 OT-227 HFA120FA60 IRFP250 PDF

    Contextual Info: PD-20378C HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets ESD Rating: Class 3B per MIL-STD-750, Method 1020


    Original
    PD-20378C HFA35HB60C MIL-STD-750, 270nC 5M-1994. O-254AA. PDF

    SOT-227 Package

    Abstract: IRFP250 UFB120FA20 0 227 200 001 SOT-227 heatsink
    Contextual Info: Bulletin PD-20487 12/01 UFB120FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 28ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape


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    PD-20487 UFB120FA20 OT-227 UFB120FA20 SOT-227 Package IRFP250 0 227 200 001 SOT-227 heatsink PDF