IRFP250 M Search Results

TA9295

Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
Contextual Info: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP250

Abstract: irfp250 applications
Contextual Info: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP250

Abstract: irfp250 applications irfp250 mosfet NOR gate
Contextual Info: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP250

Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
Contextual Info: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

irfp250

Abstract: 443D irfp250 mosfet
Contextual Info: PD-9.443D International S Rectifier IRFP250 HEXFET Power M OSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -0 8 5 Q

Contextual Info: N-CHANNEL POWER MOSFETS IRFP250/251 FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

transistor IRFP250

Contextual Info: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

irfp250 applications pulse transformer

Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IRFP250 application

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFP250

Abstract: irfp250 applications IRFP250PBF
Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

irfp250m

Abstract: IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511
Contextual Info: ?“R Rectifier IRFP250 HEXFET Power M O S FE T • • • • • • I N T E R NA T I O NA L RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss bSE

Contextual Info: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient

IRFP250 m

Abstract: AX-3019 IRFP250 ax3019 Q2102 International Rectifier PD-9.443D
Contextual Info: International Iran Rectifier 4ûS5H Sa G 0 1 5 itfl4 •IN R QSS PD-9.443D IRFP250 IN T E R N A T IO N A L HEXFET P o w e r M O S F E T R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

IRFP250

Abstract: d881 transistor IRFP250 D88FN2
Contextual Info: F U IRFP250.251 P88FN2.M2 ? 30 AMPERES 200,150 VQLTS r DS ON = 0.085 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Irfp250 irfp460

Abstract: RFP264 IRFP460 IR RFP260 IRFP064N IRFP054N RFP240 IRFp450
Contextual Info: International Iö R Rectifier HEXFET Power MOSFETs •d ■o Continuous R0 Drain-to-Source ^DS on Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Part Resistance Voltage Resistance Dissipation 25°C (°C/W) Number

1RFP240

Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
Contextual Info: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)

Irfp250 irfp460

Abstract: FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3
Contextual Info: Discrete MOSFETs TO-247 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-247 N-Channel HUF75345G3 55 Single 0.007 - - - 125 75 325 HUFA75345G3 55 Single 0.007 - - - 125

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

irf250 dc motor

Abstract: IRF250 ic data
Contextual Info: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a

fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL

IRF9540 application

Abstract: IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830
Contextual Info: N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON) (A) RDS(ON)(Ω) Operating Temperature: -55 o C to 150oC Drain-Source Min. On-State Part No. Brkdwn. Voltg. DS Current 40.00

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Contextual Info: PD-20376A HFA40HF120 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 3.1V Qrr = 510nC di rec M/dt = 350A/µs Description