IRFP RE 40 Search Results
IRFP RE 40 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| AFE8221IRFPQ1 |
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Automotive Catalog Dual IF Interface for Digital Radio 144-HTQFP -40 to 85 |
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IRFP RE 40 Datasheets Context Search
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Contextual Info: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient |
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IRFP250 O-247 | |
IRFP150
Abstract: IRFP RE 40
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IRFP150, IRFP151, IRFP152, IRFP153 TA170, RFP153 IRFP150 IRFP RE 40 | |
IRFP RE 40
Abstract: irfp254b
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IRFP254B IRFP254B FP001 IRFP RE 40 | |
IRFP 450 application
Abstract: IRFP340B
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IRFP340B IRFP 450 application IRFP340B | |
RFP9240
Abstract: IRFP P CHANNEL MOSFET* 100v
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IMFP9240R/P9241R IRFP9242R/P9243R O-247 M302271 IRFP9240R, IRFP9241R, IRFP9242R IRFP9243R RFP9240 IRFP P CHANNEL MOSFET* 100v | |
IRFP P CHANNEL MOSFET
Abstract: IRFP440B
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IRFP440B IRFP P CHANNEL MOSFET IRFP440B | |
IRFP240BContextual Info: IRFP240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching |
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IRFP240B IRFP240B | |
IRFP 260 MContextual Info: IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching |
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IRFP450B IRFP 260 M | |
IRFP250BContextual Info: IRFP250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching |
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IRFP250B IRFP250B | |
IRFP244BContextual Info: IRFP244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching |
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IRFP244B IRFP244B | |
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Contextual Info: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching |
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IRFP254B | |
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Contextual Info: NOV u tì 1991 COMPUTER PERIPHERAL AND SIGNAL PROCESSING COMPONENTS PROGRAMMABLE TRACKING FILTER IM P42C 555-15 Features The IMP42C555-15 is a programmable continuous-time filter operating in the 1.5MHz to 15MHz cutoff frequency range. Its amplitude and phase response may be |
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IMP42C555-15 15MHz 42C555-15 | |
Ericsson Installation guide for RBS 6000
Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
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304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC |