IRFD9120 N CHANNEL Search Results

IRFD9120

Abstract: FD9120 MOSFET IRFd9120 ON950 IF-D91
Contextual Info: T em ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary Part Number V BR I)SS (V) n>S(on| (ß> IRFD9120 -100 0.60 -1 .0 IRFD9123 -6 0 0.80 -0 .8 vi I d (A) S p 4-Pin DIP D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

irfd9120

Abstract: IRFD9123 IRFD9123 Siliconix
Contextual Info: Tem ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary P a rt N um ber V BR DSS (V) r DS(on) ( ß ) I d (A) IRFD9120 -100 0.60 - 1 .0 IRFD9123 -6 0 0.80 -0.8 S o 4-Pin DIP G 0 - 1|— HE • u Top View D D P-C hannel M O S F E T

IRFD9123

Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
Contextual Info: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:

Contextual Info: IRFD9120 Semiconductor April 1999 Data Sheet -1.0A, -100V, 0.6 Ohm, P-Channel Power MOSFET • -1.0A ,-100V • r DS ON = ° - 6 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRF09120

Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
Contextual Info: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP

IRFD9120

Abstract: IRFD9120PBF MOSFET IRFd9120
Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

irfd9120

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

irfd9120

Abstract: SiHFD9120
Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

IRFD9120

Abstract: irfd9120pbf
Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

marking B33 diode

Abstract: MOSFET IRFd9120 IRFD9120
Contextual Info: IINR 4ÔSSMS2 OOlSObH b33 International i«R Rectifier PD-9.3311 IRFD9120 HEXFET Power M O S F E T bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature

IRFD9120

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

IRFD9120

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

IRFD9120

Abstract: IRFD9120PBF vishay marking irfd9120 SiHFD9120
Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

IRFD9120

Contextual Info: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =

1rfd9120

Contextual Info: • H 4 3 D 5 E7 1 OOSMSfl? 7TT ■ a HAS I R F D r r i s 9 1 2 0 I R F D 9 1 2 3 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -1.0 A and -0.8A , -8 0 V and -10 0 V TO P VIEW • rDS ON = 0 .6 H and 0 .8 ÎI

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

IRFD9120

Contextual Info: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =

irf0014

Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
Contextual Info: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

1rfd9120

Abstract: IRFD9120 00LQ
Contextual Info: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

PM2104

Abstract: BAV99ZXCT PM2105 IRFD9120 BAV99ZXCT-ND IRFD9120 N CHANNEL NDC652PCT BC847C BCW60D BCW61D
Contextual Info: Application Note 2798 Current Regulation and DC Sequencing Circuits for Dual Supply GaAs Power Amplifiers Introduction The purpose of this application note is to address the issue of DC operation for Pacific Monolithics’ dual supply GaAs power amplifiers. The PM2107 is used in this application note as the example. A