IRF640 N-CHANNEL MOSFET Search Results

linear applications of power MOSFET IRF640

Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
Contextual Info: - Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF640 applications note

Abstract: IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641
Contextual Info: IRF640, IRF641, IRF642, SEMICONDUCTOR IRF643, RF1S640, RF1S640SM IHARRIS 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate

power MOSFET IRF640 fp

Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Contextual Info: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V DSS R DS on ID IRF640 IRF640FP 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A • ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM
Contextual Info: IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

irf640

Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF640 applications note

Abstract: irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
Contextual Info: IRF640, RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRF640, RF1S640SM Semiconductor Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Contextual Info: IRF640, RF1S640SM Data Sheet Title F64 1S6 SM bt A, 0V, 80 m, 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF640

Abstract: IRF640 SAMSUNG IRF642 IRF540 IR irf640 ir 643
Contextual Info: N-CHANNEL POWER MOSFETS IRF640/641/642/643 FEATURES • • • • • • • Lower Rds o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF640 applications note

Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A IRF643 RF1S640SM TB334
Contextual Info: IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate

IRF640 n-channel MOSFET

Abstract: power MOSFET IRF640 IRF640 applications note transistor irf640 irf640 mosfet power relay N-channel mosfet 200v 10A mosfet mosfet low vgs irf640 N-Channel MOSFET 200v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF640 DESCRIPTION •Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching Speed

IRF640

Abstract: IRF640 equivalent IRF640 mosfet IRF640 applications note power MOSFET IRF640 IRF640 n-channel MOSFET
Contextual Info: DC COMPONENTS CO., LTD. IRF640 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.18 Ohm ID = 18 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

Contextual Info: N-CHANNEL POWER MOSFETS IRF640/641 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

irf640

Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
Contextual Info: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF640 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220AB Plastic-Encapsulate MOSFET IRF640 MOSFET N-Channel TO-220 FEATURES z 18A, 200V z RDS(ON)=0.180 Ω z Single Pulse Avalanche Energy Rated z SOA is Power Dissipation Limited z Nanosecond Switching Speed

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN

RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 IRF640 circuit IRF642 RF1S640
Contextual Info: IRF640, IRF641, IRF642, RF1S640, RF1S640SM H A R R IS S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 16A and 18A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate