IRF621 Search Results

IRF6215

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD -9.1479A International IGR Rectifier IRF6215 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -150V ROS on = 0.29Q

IRF621R

Abstract: zc942m0 IRF620R IRF622R IRF623R zc94
Contextual Info: Rugged Power MOSFETs- IRF620R, IRF621R, IRF622R, IRF623R F ile N u m b e r 1989 Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 5.0A, 150V-200V rDs on = 0.8fi and 1.20 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■

IRF413

Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

Contextual Info: IRF6217PbF-1 HEXFET Power MOSFET VDS -150 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V A D S 1 8 S 2 7 D 6 D 5 D 2.4 Ω 6 nC S 3 -0.7 A G 4 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: SMPS MOSFET PD - 95293 IRF6216PbF HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

irf620

Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622
Contextual Info: IRF620, IRF621, IRF622, IRF623 h a r r is 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

marking JE SO 6

Abstract: EIA-541
Contextual Info: IRF6216PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 5 6 H E 0.25 [.010] 1 6X 2 3 INCHE S DIM B A 4 e e1 MAX MIN A .0532 .0688 1.35 1.75 C A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968

IRF RECTIFIER

Abstract: eia marking code rectifier diode assembly SE 40 RECTIFIER IRL3103L ST IGBT code marking
Contextual Info: PD - 95132 IRF6215S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline

IRF 740 N

Abstract: IRF 748 n irf 751 IRF 745 R BUZ90 irfz irf 740 BUZ91A IRFZ34 IRFZ40
Contextual Info: ПОЛУПРОВОДНИКОВЫЕ ПРИБОРЫ Транзисторы •Мощные полевые n-канальные транзисторы Обозначен ие КП723А КП723Б КП723В КП726А КП726Б КП727А КП727Б КП728Г1 КП728Е1

1rf634

Abstract: IRFZ25 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
Contextual Info: IO R PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 5bE D 4 Ô SS 4S E O G I D S S S 3 TO-220 Package '- • N-CHANNEL Types Vos V fifl OU Po pulsed max Ü A A W 210 190 120 100 60 56 40 33 150 150 90 90 60 60 36 36 28.0 25.0 14.0

LL110

Abstract: IRF7423 IRFR1205 equivalent IRLR2905 SMD 3F smd transistor IRLR024N IRF7389 irf7309 irlms4502 IRFR5410
Contextual Info: International Rectifier Existing Product The HEXFET SMD Navigator NEW UPCOMING Products Products released to to be released production in last 6- within next 3-4 9 months months Potential products no current plans. see bus.mgmt. Effective 6 October, 1999

IRF540R

Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
Contextual Info: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80

IRF740 smd

Abstract: TSD4M250V IRF6205 IRF722FI SGS BUZ32 SGSP475 IRF621 IRF621FI IRF622 IRF622FI
Contextual Info: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

bu2527af

Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
Contextual Info: Pøehled diskrétních polovodièových souèástek TESLA a dalších dovážených typù z nìkdejší RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOÈLENY a další prvky … spolu s náhradami … a nejpoužívanìjší standardní

Contextual Info: User's Guide SNVA108A – February 2005 – Revised May 2013 AN-1370 LM5034 Evaluation Board 1 Introduction The LM5034EVAL evaluation board provides the power supply design engineer with a fully functional 200W dual interleaved DC-DC power switching regulator using forward/active clamp topology. A single

SI3437DV

Abstract: snubber application note SI3437
Contextual Info: LTC3765 Active Clamp Forward Controller and Gate Driver FEATURES n n n n n n n n n n n n DESCRIPTION Supports Self-Starting Secondary-Side Control Direct Flux Limit Guarantees No Saturation Active Clamp Drive with Delay Adjustment On-Chip Bridge Rectifier Eliminates Need for

LTC4259A

Contextual Info: LTC4265 IEEE 802.3at High Power PD Interface Controller with 2-Event Classification Recognition FEATURES n n n n n n n n n n DESCRIPTION IEEE 802.3af/at Powered Device PD Controller IEEE 802.3at 2-event Classification Signaling Programmable Classification Current

irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 2SK134 equivalent irf 111 irf120 IRF351 IRF331 2SK132
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

irf530 equivalent

Abstract: CROSS REFERENCE VN99AB IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g ss <0J= c P fi i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j

RELAY 1ZS

Abstract: VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *200°C RATING Packages: I BV qss Volts 450-500 TO -3 T O -2 20 S ilic o n ix

VN67AD

Abstract: 2N6658 VN89AF VN66AD IRF620 IRF622 IRF630 IRF631 VN66AF IRF633
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

VN89AF

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150