IRF610SPBF Search Results
IRF610SPBF Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRF610SPBF | International Rectifier | HEXFET Power MOSFET | Original | 1.9MB | 9 | ||
| IRF610SPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.3A D2PAK | Original | 9 |
IRF610SPBF Price and Stock
Vishay Intertechnologies IRF610SPBFTrans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF610SPBF | 17 | 8 |
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IRF610SPBF | Bulk | 20 Weeks | 1,000 |
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IRF610SPBF | 17 | 20 Weeks | 1 |
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IRF610SPBF | Cut Tape | 512 | 1 |
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| IRF610SPBF | Tape & Reel | 512 | 100 |
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| IRF610SPBF | Bulk | 1,000 |
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IRF610SPBF | Tube | 1,000 |
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IRF610SPBF | Tube | 24 Weeks | 1,000 |
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IRF610SPBF | 1 |
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Get Quote | |||||||
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IRF610SPBF | 550 |
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Get Quote | |||||||
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IRF610SPBF | 4,200 | 25 Weeks | 50 |
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IRF610SPBF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PD- 95747 IRF610SPbF Lead-Free www.irf.com 1 8/23/04 IRF610SPbF 2 www.irf.com IRF610SPbF www.irf.com 3 IRF610SPbF 4 www.irf.com IRF610SPbF www.irf.com 5 IRF610SPbF 6 www.irf.com IRF610SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations |
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irf610spbfeia-418 | |
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Contextual Info: PD- 95747 IRF610SPbF Lead-Free Document Number: 91024 8/23/04 www.vishay.com 1 IRF610SPbF Document Number: 91024 www.vishay.com 2 IRF610SPbF Document Number: 91024 www.vishay.com 3 IRF610SPbF Document Number: 91024 www.vishay.com 4 IRF610SPbF Document Number: 91024 |
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irf610spbf12-mar-07 | |
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Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irf610ssihf610s2002/95/eco-263+1 | |
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Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irf610ssihf610so-2632002/95/ec+3 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
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Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irf610ssihf610s2002/95/eco-263+2 | |
IRF610SContextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irf610ssihf610so-2632002/95/ec+1 | |
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
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100mt160papbf100mt160pa100mt160pbpbfiru1239sc+9 | |
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Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating |
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irf610ssihf610ssmd-22012-mar-07 | |
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Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irf610ssihf610s2002/95/eco-263+1 | |
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Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating |
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irf610ssihf610ssmd-22018-jul-08 | |
IRF610SContextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the |
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irf610ssihf610so-26318-jul-08 | |
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Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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irf610ssihf610s2002/95/eco-263+1 | |
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