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    IRF5210 Search Results

    IRF5210 Datasheets (23)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF5210
    International Rectifier Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Original PDF 129.52KB 8
    IRF5210
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF5210 with Standard Packaging Original PDF 133.72KB 9
    IRF5210
    Semelab Transistor - Datasheet Reference Original PDF 25.41KB 2
    IRF5210
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF5210
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -100V, -35A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRF5210L
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF5210L with Standard Packaging Original PDF 201.76KB 11
    IRF5210L
    International Rectifier HEXFET Power MOSFET Original PDF 197.56KB 10
    IRF5210LPBF
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF5210L with Lead Free Packaging Original PDF 201.76KB 11
    IRF5210LPBF
    International Rectifier Original PDF 197.56KB 10
    IRF5210PBF
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF5210 with Lead Free Packaging Original PDF 133.72KB 9
    IRF5210PBF
    International Rectifier Original PDF 129.53KB 8
    IRF5210S
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Standard Packaging Original PDF 201.76KB 11
    IRF5210S
    International Rectifier HEXFET Power MOSFET Original PDF 197.56KB 10
    IRF5210S
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF5210SPBF
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging Original PDF 201.76KB 11
    IRF5210SPBF
    International Rectifier Original PDF 197.56KB 10
    IRF5210STRL
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF 197.55KB 10
    IRF5210STRL
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Tape and Reel Left Packaging Original PDF 201.76KB 11
    IRF5210STRLPBF
    International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A D2PAK Original PDF 10
    IRF5210STRLPBF
    International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging shipped on Tape and Reel Left Original PDF 201.76KB 11
    SF Impression Pixel

    IRF5210 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IRF5210PBF

    MOSFET P-CH 100V 40A TO220AB
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    EBV Elektronik IRF5210PBF 5,000 19 Weeks 1,000
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    Infineon Technologies AG IRF5210STRLPBF

    MOSFET P-CH 100V 38A D2PAK
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    DigiKey () IRF5210STRLPBF Cut Tape 4,707 1
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    IRF5210STRLPBF Digi-Reel 4,707 1
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    IRF5210STRLPBF Reel 4,700 800
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    IRF5210STRLPBF Ammo Pack 1
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    Mouser Electronics IRF5210STRLPBF 9,284
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    IRF5210STRLPBF 2,268 28
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    IRF5210STRLPBF 482 5
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    Arrow Electronics () IRF5210STRLPBF 81,600 18 Weeks 800
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    Infineon Technologies AG IRF5210L

    MOSFET P-CH 100V 40A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF5210L Tube 200
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    Infineon Technologies AG AUIRF5210S

    MOSFET P-CH 100V 38A D2PAK
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    Infineon Technologies AG IRF5210STRR

    MOSFET P-CH 100V 40A D2PAK
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    DigiKey IRF5210STRR Reel 800
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    IRF5210 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRF5210 TO-220AB l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D VDSS = -100V The TO-220 package is universally preferred for all


    Original
    IRF5210 O-220AB -100V O-220 PDF

    IRF5210

    Abstract: SHD230452
    Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE


    Original
    SHD230452 IRF5210 -250mA IRF5210 SHD230452 PDF

    IRF5210

    Contextual Info: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )


    Original
    IRF5210 00A/ms 300ms, IRF5210 PDF

    IRF5210

    Abstract: IRF5210S 1405B
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated


    Original
    1405B IRF5210S -100V IRF5210 IRF5210S 1405B PDF

    irf5210s

    Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s PDF

    IRF5210

    Abstract: SHD225452
    Contextual Info: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S


    Original
    SHD225452 IRF5210 S-100 SHD225452S SHDC225452 IRF5210 SHD225452 PDF

    IRF5210

    Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A


    Original
    IRF5210PbF -100V O-220 O-220AB. O-220AB IRF5210 PDF

    IRF5210L

    Abstract: IRF5210S
    Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-148-79 IRF5210S HEXFET D2Pak PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S


    Original
    IRF5210S 91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L PDF

    1Actc

    Contextual Info: PD 9.1434 International Iö R Rectifier IRF5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistancw Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channet Fully Avalanche Rated V d s s = -1 0 0 V RüS on = 0.06Q


    OCR Scan
    IRF5210 O-220 1Actc PDF

    IRF5210L

    Abstract: IRF5210S
    Contextual Info: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω


    Original
    91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L IRF5210S PDF

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan
    BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240 PDF

    Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. PDF

    IRF5210L

    Abstract: IRF5210S
    Contextual Info: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω


    Original
    91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L IRF5210S PDF

    IRF5210

    Abstract: shd230452
    Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE


    Original
    SHD230452 IRF5210 SHD230452 030Typ LCC-28T IRF5210 PDF

    IRF5210PBF

    Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A


    Original
    IRF5210PbF -100V O-220 O-220AB IRF5210PBF PDF

    IRF5210PBF

    Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A


    Original
    IRF5210PbF -100V O-220 O-220AB IRF5210PBF PDF

    irf5210s

    Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    97049B IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s PDF

    IRF5210

    Abstract: 91434A
    Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description


    Original
    1434A IRF5210 -100V O-220 IRF5210 91434A PDF

    shd225452

    Abstract: IRF52
    Contextual Info: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S


    Original
    SHD225452 IRF5210 S-100 SHD225452S SHDC225452 SHD225452 O-254 IRF52 PDF

    IRF5210

    Abstract: irf1010 applications IRF1010
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated


    Original
    IRF5210 -100V IRF5210 irf1010 applications IRF1010 PDF

    IRF5210PBF

    Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A


    Original
    IRF5210PbF -100V O-220 O-220AB. O-220AB IRF5210PBF PDF

    Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    97049B IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. PDF

    Contextual Info: PD - 97049 IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original
    IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. PDF

    IRF5210

    Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description


    Original
    1434A IRF5210 -100V O-220 IRF5210 PDF