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    IRF32 Search Results

    IRF32 Datasheets (135)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF320
    Harris Semiconductor Power MOSFET Selection Guide Original PDF 41.91KB 1
    IRF320
    Intersil 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 ?, N-Channel Power MOSFETs Original PDF 69.25KB 7
    IRF320
    Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 350-400 V Scan PDF 169.33KB 5
    IRF320
    FCI POWER MOSFETs Scan PDF 204.39KB 4
    IRF320
    Frederick Components Power MOSFET Selection Guide Scan PDF 204.39KB 4
    IRF320
    General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. Scan PDF 165.82KB 5
    IRF320
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 175.31KB 5
    IRF320
    International Rectifier N-Channel Power MOSFETs Scan PDF 34.17KB 1
    IRF320
    International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF 42.42KB 1
    IRF320
    Motorola European Master Selection Guide 1986 Scan PDF 34.41KB 1
    IRF320
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 162.45KB 1
    IRF320
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 84.14KB 1
    IRF320
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.68KB 1
    IRF320
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 125.28KB 1
    IRF320
    Unknown FET Data Book Scan PDF 164.38KB 3
    IRF320
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 39.33KB 1
    IRF320
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 39.33KB 1
    IRF320
    Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF 219.08KB 5
    IRF320
    Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF 155.17KB 1
    IRF320
    Siliconix MOSPOWER Design Data Book 1983 Scan PDF 117.08KB 3
    ...
    SF Impression Pixel

    IRF32 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IRF3205PBF

    MOSFET N-CH 55V 110A TO220AB
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    Infineon Technologies AG IRF3205ZSTRLPBF

    MOSFET N-CH 55V 75A D2PAK
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    Infineon Technologies AG IRF3205ZPBF

    MOSFET N-CH 55V 75A TO220AB
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    Infineon Technologies AG AUIRF3205Z

    MOSFET N-CH 55V 75A TO220AB
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    Infineon Technologies AG IRF3205L

    MOSFET N-CH 55V 110A TO262
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    IRF32 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF3205

    Abstract: IA418 AN-994 IRF3205L IRF3205S IA-418
    Contextual Info: PD - 94149 IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International Rectifier


    Original
    IRF3205S/L IA-418. IRF3205 IA418 AN-994 IRF3205L IRF3205S IA-418 PDF

    IRF3205

    Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
    Contextual Info: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V


    OCR Scan
    1279C IRF3205 O-220 IRF3205 IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET PDF

    Contextual Info: IRF3205 TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


    Original
    IRF3205 O-220AB O-220 PDF

    IRF3205 application

    Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
    Contextual Info: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


    Original
    1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 application irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2 PDF

    Contextual Info: PD - 9.1279D International Rectifier I R • • • • • • IRF3205 HEXFET Power MOSFET A dvanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 ° C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = 55 V


    OCR Scan
    1279D IRF3205 PDF

    IRF3205

    Abstract: IRF3205 equivalent irf3205 DRIVER driver for IRF3205 IRF3205 DATASHEET IRF3205 E DATASHEET IRF3205 IR PD-91279E datasheet for IRF3205 irf3205 mosfet transistor
    Contextual Info: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International


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    PD-91279E IRF3205 O-220 IRF3205 IRF3205 equivalent irf3205 DRIVER driver for IRF3205 IRF3205 DATASHEET IRF3205 E DATASHEET IRF3205 IR PD-91279E datasheet for IRF3205 irf3205 mosfet transistor PDF

    Contextual Info: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFETÆ Power MOSFET D VDSS = 55V RDS on = 8.0m! G ID = 110A…


    Original
    IRF3205SPbF IRF3205LPbF moun00 EIA-418. PDF

    Contextual Info: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


    Original
    PD-94791B IRF3205PbF O-220 O-220AB PDF

    IRF3205S

    Abstract: AN-994 IRF530S
    Contextual Info: PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description


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    IRF3205S IRF3205S AN-994 IRF530S PDF

    IRF3205Z

    Contextual Info: PD - 94653 IRF3205Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ


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    IRF3205Z O-220AB IRF1010 IRF3205Z PDF

    5109d

    Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    000510e IRF320/321/322/323 IRF321 IRF322 IRF323 00GS435 5109d PDF

    IRF 640 mosfet

    Abstract: SEC IRF 640
    Contextual Info: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description


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    94653C IRF3205Z IRF3205ZS IRF3205ZL O-220AB IRF3205Z IRF3205ZS AN-994. IRF 640 mosfet SEC IRF 640 PDF

    Contextual Info: IRF3205 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)98# I(DM) Max. (A) Pulsed I(D)69 @Temp (øC)100# IDM Max (@25øC Amb)390# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55õ


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    IRF3205 PDF

    Contextual Info: IRF323 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)11 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55õ


    Original
    IRF323 PDF

    IRF 47

    Abstract: IRF32
    Contextual Info: PD - 94928 IRF3205VPbF • Lead-Free www.irf.com 1 1/6/04 IRF3205VPbF 2 www.irf.com IRF3205VPbF www.irf.com 3 IRF3205VPbF 4 www.irf.com IRF3205VPbF www.irf.com 5 IRF3205VPbF 6 www.irf.com IRF3205VPbF www.irf.com 7 IRF3205VPbF TO-220AB Package Outline Dimensions are shown in millimeters inches


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    IRF3205VPbF O-220AB IRF 47 IRF32 PDF

    diode 66a

    Abstract: IRF 640 mosfet IRF3205Z IRF3205ZL IRF3205ZS
    Contextual Info: PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V


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    94653B IRF3205Z IRF3205ZS IRF3205ZL AN-994. O-220AB diode 66a IRF 640 mosfet IRF3205Z IRF3205ZL IRF3205ZS PDF

    IRF3205

    Abstract: driver for IRF3205 irf3205 DRIVER IRF3205 equivalent irf3205 mosfet transistor irf3205 mosfet IRF3205 DATASHEET PD-91279E IRF3205 TO-220
    Contextual Info: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PD-91279E IRF3205 O-220 O-220AB IRF3205 driver for IRF3205 irf3205 DRIVER IRF3205 equivalent irf3205 mosfet transistor irf3205 mosfet IRF3205 DATASHEET PD-91279E IRF3205 TO-220 PDF

    IRF3205 application

    Abstract: IRF3205 IR IRF3205S
    Contextual Info: PD - 9.1304B International IQ R Rectifier IRF3205S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF32305S • Low-profile through-hole (IRF3205L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V


    OCR Scan
    IRF32305S) IRF3205L) IRF3205 application IRF3205 IR IRF3205S PDF

    Diode 62a

    Abstract: AN-994 IRF530S marking 62a marking CODE 62A
    Contextual Info: IRF3205S/IRF3205L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance


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    IRF3205S/IRF3205L EIA-418. Diode 62a AN-994 IRF530S marking 62a marking CODE 62A PDF

    IFR320

    Contextual Info: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    IRF320, IRF321, IRF322, IRF323 RF322, IFR320 PDF

    ifr320

    Contextual Info: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    Original
    IRF320, IRF321 IRF322, IRF323 TA17404. ifr320 PDF

    SFN402A3

    Abstract: IRF320
    Contextual Info: '^ 8 3 6 8 6 0 2 SOLITRON DEVICES INC DE J fl3tflbG2 □ □ □ 0 3 D S ô q T-39-11 smoua B o ü tro n D E V I C E S , I NC. / POWER MOS DEVICE 400V/3A N Channel, TO-3 Package, IRF320 Equivalent The new Solitron Power MOS technology combines the efficient


    OCR Scan
    T-39-11 00V/3A) IRF320 SFN402A3 HP214A flF/450V SFN402A3 PDF

    SFN402B3

    Abstract: IRF321 HP-214A
    Contextual Info: f i 11—i • 8 3 6 8 6 0 2 SO L IT R O N D E V IC E S , , . 11. IN C b l DE | _ fl3 h ô b O E DD 0D 31S □ | Dr T-3 9 -1 1 _ S o ls f r o h SFN _ DEVICES, INC. POWER IV30S DEVICE 350V/3A N Channel, TO-3 Package, IRF321 Equivalent The


    OCR Scan
    T-39-11 SFN402B3 IV30S 50V/3A) IRF321 hp214a s0j1f/450v SFN402B3 HP-214A PDF

    IFR320

    Abstract: IRF322 IRF320
    Contextual Info: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    IRF320, IRF321 IRF322, IRF323 TA17404. IRF321, RF322, IFR320 IRF322 IRF320 PDF