IRF1010 E DATASHEET Search Results

IRF9540N

Abstract: BU 11A
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω

IRF4905

Abstract: IRF4905 P-channel power irf1010 applications IRF1010 E IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

IRF5210

Abstract: irf1010 applications IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

IRF540N

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description

IRF1010

Abstract: IRL630
Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V

IRFIZ44N equivalent

Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

IRF1010

Abstract: IRFI1010N IRF1010N IRFI840G
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1010N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

MOSFET IRFZ46N

Abstract: IRFZ46N IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1277 IRFZ46N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G ID = 46A

IRF1010

Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

Contextual Info: PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 3.7mΩ G Description

AUIRF1404

Abstract: AUIRF1404Z
Contextual Info: PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 3.7mΩ G Description

AN-1005

Abstract: IRF1010
Contextual Info: PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 5.5mΩ

Contextual Info: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ

IRF10

Contextual Info: PD - 96040B IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 3.7mΩ

Contextual Info: PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 5.5mΩ

IRF 1630

Contextual Info: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ

IRF3710ZPBF

Abstract: irf3710z IRF3710ZSPBF auirf3710z AN-994 IRF3710ZL IRF3710ZLPBF IRF3710ZS auirf
Contextual Info: PD - 95466A IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

Contextual Info: PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET V BR DSS D 40V RDS(on) typ.

Contextual Info: PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET V BR DSS D 40V RDS(on) typ.

Contextual Info: PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

AN-994

Abstract: irf1010 applications
Contextual Info: PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C IC = 15A, TC = 100°C E G tsc > 5µs, Tjmax = 175°C G E VCE on typ. = 1.55V @ 8A n-channel Applications • Appliance Drives • Inverters • UPS

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters