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    IRF10 Search Results

    IRF10 Datasheets (110)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF100
    Nikkohm 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED Original PDF 82.63KB 2
    IRF100
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 84.05KB 1
    IRF100B201
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 192A TO-220AB Original PDF 611.82KB
    IRF100B202
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 97A TO-220AB Original PDF 531.51KB
    IRF100P218AKMA1
    Infineon Technologies MOSFET N-CH 100V 209A TO247AC Original PDF 1.16MB 11
    IRF100P218XKMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRENCH_MOSFETS Original PDF 1.05MB
    IRF100P219AKMA1
    Infineon Technologies MOSFET N-CH 100V TO247AC Original PDF 1.16MB 11
    IRF100P219XKMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRENCH_MOSFETS Original PDF 1.03MB
    IRF100S
    PICO Electronics Series IR Isolated Regulated up to 10 Watt DC-DC Converters Scan PDF 151.42KB 2
    IRF100S201
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 192A D2PAK Original PDF 611.82KB
    IRF101
    Fairchild Semiconductor N-Channel Power MOSFETs, 27 A, 60-100V Scan PDF 150.3KB 5
    IRF101
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 84.05KB 1
    IRF1010
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF1010
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 112.74KB 1
    IRF1010
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.65KB 1
    IRF1010E
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging Original PDF 206.74KB 9
    IRF1010E
    International Rectifier HEXFET Power MOSFET Original PDF 168.91KB 8
    IRF1010E
    International Rectifier HEXFET Power MOSFET Original PDF 202.54KB 8
    IRF1010E
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF1010E
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    SF Impression Pixel

    IRF10 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IRF1010EZPBF

    MOSFET N-CH 60V 75A TO220AB
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    DigiKey IRF1010EZPBF Tube 4,565 1
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    Rochester Electronics IRF1010EZPBF 4,864 1
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    Infineon Technologies AG IRF1010ZSTRLPBF

    MOSFET N-CH 55V 75A D2PAK
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    IRF1010ZSTRLPBF Reel 2,400 800
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    Chip Stock IRF1010ZSTRLPBF 17,900
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    Infineon Technologies AG IRF1018ESTRLPBF

    MOSFET N-CH 60V 79A D2PAK
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    DigiKey () IRF1018ESTRLPBF Cut Tape 3,031 1
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    IRF1018ESTRLPBF Digi-Reel 3,031
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    Avnet Americas () IRF1018ESTRLPBF Ammo Pack 1
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    Chip One Stop IRF1018ESTRLPBF Cut Tape 25,465 0 Weeks, 1 Days 1
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    Infineon Technologies AG IRF1018EPBF

    MOSFET N-CH 60V 79A TO220AB
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    DigiKey IRF1018EPBF Tube 1,898 1
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    IRF1018EPBF 1,802 18 Weeks 1
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    Infineon Technologies AG IRF100B202

    MOSFET N-CH 100V 97A TO220AB
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    DigiKey IRF100B202 Tube 1,741 1
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    IRF10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
    Contextual Info: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V


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    IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF PDF

    Mosfet 100V 50A

    Abstract: irf10n40
    Contextual Info: IRF10N40 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this


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    IRF10N40 Mosfet 100V 50A irf10n40 PDF

    Contextual Info: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan
    IRF101ONS) IRF101ONL) PDF

    IRF1010E

    Contextual Info: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier


    OCR Scan
    IRF1010E IRF1010E PDF

    AN-994

    Abstract: IRF1010N IRF1010NS IRF530S
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω


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    IRF1010NS AN-994 IRF1010N IRF1010NS IRF530S PDF

    IRF1010N

    Abstract: IRF1010
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description


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    1278B IRF1010N O-220 IRF1010N IRF1010 PDF

    marking code 43a

    Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
    Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


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    91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL PDF

    Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


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    IRF1010E O-220 PDF

    Contextual Info: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ


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    5361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. PDF

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Contextual Info: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


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    IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF IRF1010Z IRF1010ZL IRF1010ZS PDF

    Contextual Info: IRF1010NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL


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    IRF1010NS/LPbF EIA-418. PDF

    Contextual Info: IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


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    IRF1010NPbF O-220AB O-220AB. PDF

    AN-994

    Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
    Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


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    91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint PDF

    Contextual Info: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


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    IRF1010EPbF O-220 fo20AB PDF

    marking F53

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
    Contextual Info: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†


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    IRF1010NS/L IRF1010NS) IRF1010NL) marking F53 AN-994 IRF1010N IRF1010NL IRF1010NS SS2000 PDF

    irf1010e

    Abstract: irf1010e equivalent *f1010e
    Contextual Info: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A… S Description Fifth Generation HEXFETs from International Rectifier


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    1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e PDF

    51a marking

    Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
    Contextual Info: PD - 94724B IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


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    94724B IRF1010EZ IRF1010EZS IRF1010EZL O-220AB 51a marking IRF1010EZS AN-994 IRF1010EZ IRF1010EZL PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


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    O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    DM marking code

    Abstract: irf 560 IRF1010Z IRF1010ZL IRF1010ZS
    Contextual Info: PD - 94652A IRF1010Z IRF1010ZS IRF1010ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V


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    4652A IRF1010Z IRF1010ZS IRF1010ZL AN-994. O-220AB DM marking code irf 560 IRF1010Z IRF1010ZL IRF1010ZS PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES *f1010e
    Contextual Info: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


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    IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e PDF

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Contextual Info: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


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    IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. O-220AB IRF1010Z IRF1010ZL IRF1010ZS PDF

    IRF1010

    Abstract: to-22qab XGR719C 1789
    Contextual Info: TO-22QAB EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO O IRF1010 K a i 71 ge 17 ASSEMBLY LOT CODE PART NUMBER 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C


    OCR Scan
    O-22QAB IRF1010 XGR719C to-22qab 1789 PDF

    IRF1010E

    Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


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    IRF1010E O-220 O-220AB IRF1010E PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES
    Contextual Info: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


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    IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES PDF