IRF1010 Search Results
IRF1010 Datasheets (94)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1010 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 112.74KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.65KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010E | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging | Original | 206.74KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010E | International Rectifier | HEXFET Power MOSFET | Original | 168.91KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010E | International Rectifier | HEXFET Power MOSFET | Original | 202.54KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010E |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010E | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010EL | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging | Original | 126.95KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010EL | International Rectifier | HEXFET Power MOSFET | Original | 209.85KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010EL | International Rectifier | HEXFET Power MOSFET | Original | 123.88KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010EL |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ELPBF | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging | Original | 126.95KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ELPBF | International Rectifier | TRANS MOSFET N-CH 60V 84A 3TO-262 | Original | 220.23KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1010EPBF | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging. | Original | 206.74KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010EPBF | International Rectifier | TRANS MOSFET N-CH 60V 84A 3TO-220AB | Original | 180.02KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ES | International Rectifier | HEXFET Power Mosfet | Original | 123.87KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ES | International Rectifier | HEXFET Power Mosfet | Original | 209.84KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ES | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging | Original | 126.95KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ES |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 |
IRF1010 Price and Stock
Rochester Electronics LLC AUIRF1010ZMOSFET N-CH 55V 75A TO220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AUIRF1010Z | Bulk | 12,268 | 231 |
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Rochester Electronics LLC AUIRF1010ZLMOSFET N-CH 55V 75A TO262 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AUIRF1010ZL | Bulk | 8,552 | 184 |
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Infineon Technologies AG IRF1010EZPBFMOSFET N-CH 60V 75A TO220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF1010EZPBF | Tube | 4,565 | 1 |
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IRF1010EZPBF | Bulk | 1 |
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IRF1010EZPBF | 1,767 |
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IRF1010EZPBF | 3,980 | 383 |
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IRF1010EZPBF | 500 | 13 Weeks | 1,000 |
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IRF1010EZPBF | Bulk | 2,030 | 1 |
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IRF1010EZPBF | 4,864 | 1 |
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IRF1010EZPBF | 148 | 1 |
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IRF1010EZPBF | 14 Weeks | 1,000 |
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IRF1010EZPBF | 7,500 | 50 |
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Infineon Technologies AG IRF1010ZSTRLPBFMOSFET N-CH 55V 75A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF1010ZSTRLPBF | Cut Tape | 3,076 | 1 |
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IRF1010ZSTRLPBF | Reel | 1 |
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IRF1010ZSTRLPBF | 5,600 | 98 Weeks | 800 |
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IRF1010ZSTRLPBF | 1,770 | 1 |
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IRF1010ZSTRLPBF | Reel | 800 | 800 |
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IRF1010ZSTRLPBF | 17,900 |
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Rochester Electronics LLC AUIRF1010EZAUTOMOTIVE HEXFET N CHANNEL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AUIRF1010EZ | Bulk | 617 | 195 |
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IRF1010 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AN-994
Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
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Original |
IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF | |
Contextual Info: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated |
OCR Scan |
IRF101ONS) IRF101ONL) | |
IRF1010EContextual Info: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier |
OCR Scan |
IRF1010E IRF1010E | |
AN-994
Abstract: IRF1010N IRF1010NS IRF530S
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Original |
IRF1010NS AN-994 IRF1010N IRF1010NS IRF530S | |
IRF1010N
Abstract: IRF1010
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Original |
1278B IRF1010N O-220 IRF1010N IRF1010 | |
marking code 43a
Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
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Original |
91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL | |
Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International |
Original |
IRF1010E O-220 | |
Contextual Info: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ |
Original |
5361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. | |
IRF1010Z
Abstract: IRF1010ZL IRF1010ZS
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Original |
IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF IRF1010Z IRF1010ZL IRF1010ZS | |
Contextual Info: IRF1010NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL |
Original |
IRF1010NS/LPbF EIA-418. | |
Contextual Info: IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) |
Original |
IRF1010NPbF O-220AB O-220AB. | |
AN-994
Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
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Original |
91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint | |
Contextual Info: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description |
Original |
IRF1010EPbF O-220 fo20AB | |
IRF1010E
Abstract: *f1010e
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OCR Scan |
IRF1010E O-220 IRF1010E *f1010e | |
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irf1010e
Abstract: irf1010e equivalent *f1010e
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Original |
1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e | |
51a marking
Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
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Original |
94724B IRF1010EZ IRF1010EZS IRF1010EZL O-220AB 51a marking IRF1010EZS AN-994 IRF1010EZ IRF1010EZL | |
irf1010e equivalent
Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
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Original |
O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent | |
DM marking code
Abstract: irf 560 IRF1010Z IRF1010ZL IRF1010ZS
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Original |
4652A IRF1010Z IRF1010ZS IRF1010ZL AN-994. O-220AB DM marking code irf 560 IRF1010Z IRF1010ZL IRF1010ZS | |
AN-994
Abstract: IRF1010EL IRF1010ES *f1010e
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Original |
IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e | |
IRF1010Z
Abstract: IRF1010ZL IRF1010ZS
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Original |
IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. O-220AB IRF1010Z IRF1010ZL IRF1010ZS | |
IRF1010
Abstract: to-22qab XGR719C 1789
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OCR Scan |
O-22QAB IRF1010 XGR719C to-22qab 1789 | |
IRF1010EContextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International |
Original |
IRF1010E O-220 O-220AB IRF1010E | |
AN-994
Abstract: IRF1010EL IRF1010ES
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Original |
IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES | |
IRF1010E
Abstract: IOR 1010
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OCR Scan |
IRF1010E IRF1010E IOR 1010 |