IRF-520 MOSFET Search Results

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

IRF Power MOSFET code marking

Abstract: IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A

Contextual Info: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

DIODE 83A

Abstract: AN1001 EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 MOSFET IRF 94
Contextual Info: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

AN1001

Abstract: EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 irf 48v mosfet
Contextual Info: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

TO-247AC Package

Abstract: IRFP064V irf 2030
Contextual Info: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ

irf 2030 n

Abstract: irf 2030 IRF 545 IRFP064V
Contextual Info: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ

IRFR5305

Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A

IRFR5305

Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A

Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A

IR F740

Contextual Info: • M3 0 SS7 1 00S40SÖ 23 HARRIS 3fl4 ■ HAS IRF740/741/74 2/743 IRF740R/741R/742R/743R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1 9 9 1 Package Features T 0 -2 2 0 A B • 8A and 10A, 3 5 0 V - 4 0 0 V T O P V IE W • r o s ° n = 0 .5 5 f i and 0 .8 f i

IRF341R

Contextual Info: [2 HARRIS IR F 3 4 0 /3 4 1 /3 4 2 /3 4 3 IR F 340R /341 R /3 4 2 R /343R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 9 1 P a ck a g e F e a tu re s T O -2 0 4 A A BOTTOM VIEW • 10A and 8.3A, 400V - 350V • rDS on = 0.55H and 0 .8 0 ÎÎ

742r

Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
Contextual Info: 23 H A R R IS IR F740/741/742/743 IRF740R/741R/742R/743R N -Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B • 8A and 10A, 350V - 400V TOP VIEW • rD S °n = 0 .5 5 fi and 0.8J1 • Single Pulse Avalanche Energy Rated*

Contextual Info: PD - 95549 IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: • 4 3 0 5 3 7 1 0 0 5 3 ^ 4 3 HARRIS 1T4 ■ HAS IR F340/341/342/343 IRF340R/341R/342R/343R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A • 10A and 8.3A , 4 0 0 V - 3 5 0 V B O T T O M V IE W • rD S on = 0 .5 5 0 and 0 .8 0 H

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

4336 MOSFET

Abstract: MOSFET IRF 713 n-channel 4336 712r RF710R IRF711
Contextual Info: IRF710/7 1 1 /7 1 2 /7 1 3 IRF71 OR/711R/712R/713R 33 HARRIS N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • rD S °n - 3-6 fl and 5 .0 ft • Single Pulse Avalanche Energy Rated*

MOSFET IRF 713

Contextual Info: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)

ELECTRONIC BALLAST 36W circuit diagram

Abstract: circuit diagram electronic ballast for 36W tube capacitor 47uF/400V T500mA 100uF 400V capacitor capacitor 100MF 100v BZX85C15V VOGT r7 capacitor 47MF 50v capacitor 100nf 400v
Contextual Info: AND8312/D A 36W Ballast Application with the NCP5104 Prepared by: Thierry Sutto http://onsemi.com NOTE: BEFORE PLUGGING IN THE DEMO BOARD, MAKE SURE THE JUMPER IS ON THE CORRECT POSITION: IF J2 IS USED, THEN Vin MUST BE LOWER THAN 145 Vac. This document describes how the NCP5104 driver can be

mosfet yb

Abstract: SSF6N80A
Contextual Info: Advanced SSF6N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■

EIA-541

Contextual Info: IRF7606PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

irf5205

Abstract: IRF520 IRF521 IRF523 IRF522
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

EIA-541

Contextual Info: PD - 95245 IRF7606PbF Generation V Technology Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description HEXFET Power MOSFET l l A D 1 8 S 2 7 D S 3 6 D

marking code YW DIODE

Abstract: IRF7606
Contextual Info: PD - 91264E IRF7606 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS(on) = 0.09Ω