IRF MOSFET 10A P Search Results

Contextual Info: IRFW/I740A A d van ced Power MOSFET FEATURES B V DSS = 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 1 0 0 .5 5 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K

IRF MOSFET 100A 200v

Abstract: MOSFET 150 N IRF
Contextual Info: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRF Power MOSFET code marking

Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Contextual Info: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF 511 MOSfet

Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Contextual Info: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

IRFIZ24N

Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

SN146-1R0

Abstract: capacitor 1000uF 16V SN146 IRF FET McMaster-Carr schematic diagram PWM 12V 30a 1000uf, 6.3v electrolytic capacitor 18a sot23 1000uf, 16v electrolytic capacitor capacitor 1000uF/16V
Contextual Info: IRPP3637-18A POWIR+ Chipset Reference Design 18Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3637SPBF PWM & Driver IC and IRLR8713PBF & IRLR7843PBF D-Pak MOSFETs By Steve Oknaian, Senior Applications Engineer Table of Contents

5M MARKING CODE DIODE 5A 100V

Contextual Info: PD - 95087 IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω

Contextual Info: PD - 95551 IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description

Contextual Info: PD - 95554 IRLR3714PbF IRLU3714PbF SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET Power MOSFET

IRF 870

Abstract: HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260
Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

irf power mosfet

Abstract: IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3
Contextual Info: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

schematic diagram inverter 12v to 24v 1000w

Abstract: 1000w class d circuit diagram schematics IRF 9234 schematic diagram inverter 12v to 24v 30a 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics laptop LCD inverter SCHEMATIC 12vdc to 230vac mosfet inverter 700w audio amplifier circuit diagram schematic diagram inverter 2000w
Contextual Info: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 1 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.

MOSFET IRF 570

Abstract: marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030
Contextual Info: PD - 94081A IRFP31N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 0.15Ω 500V Features and Benefits

IRLIZ34N

Abstract: MOSFET IRF 630
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD - 95075 IRFR420APbF IRFU420APbF HEXFET Power MOSFET VDSS RDS(on) max ID 3.0Ω 3.3A D-Pak IRFR420APbF I-Pak IRFU420APbF

IRF 244 MOSFET

Abstract: IRF 707 P SMPS 24V AN-994 EIA-541 IRFR120 IRFR3708 IRFU120 IRFU3708 U120
Contextual Info: PD - 95071A IRFR3708PbF IRFU3708PbF SMPS MOSFET HEXFET Power MOSFET Applications l l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use VDSS RDS on max ID 30V 12.5mΩ 61A„ High Frequency Buck Converters for

1530A

Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A

1530A

Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A

IRF 042

Abstract: irf 540 mosfet IRL3803 IRLI3803
Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D