IRF 260 N
Abstract: irf 44 n IRF 409 irf 9246 P 181 YE IRF 1060 IRF 1040 9249B HEXFET IRF
Contextual Info: IRLI3705N Package Outline HEXFET TO-220 Fullpak Outline Dimensions are shown in millimeters inches 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) 4.80 (.189 ) 4.60 (.181 ) -A3.7 0 (.145) 3.2 0 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2.80 (.110)
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irli3705no-220irf 260 nirf 44 n+7irf 409irf 9246p 181 yeirf 1060irf 10409249bhexfet irf
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14.5M 1982
Abstract: IRF1010E irf 9246 TO-247AC Package IRF1010
Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2
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irfp048no-247aco-247-a14.5m 1982+4irf1010eirf 9246to-247ac packageirf1010
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14.5M 1982
Abstract: irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n
Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) NOT ES : 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 )
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irfp048no-247aco-247-a14.5m 1982+5irf 9246irf1010eto-247ac packageirf 1010irf 44 n
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irfz34n equivalent
Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276cirfz34no-220irfz34n equivalent+2irfz34n mosfetrfz34n
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irfz34n
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276cirfz34no-220 |
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IRFZ34N
Abstract: irfz34n equivalent irf 405
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276cirfz34no-220irfz34n equivalent+1irf 405
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irf 9246
Abstract: IRF1010E 14.5M 1982 irf1010
Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2
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irfp048no-247aco-247-airf 9246+3irf1010e14.5m 1982irf1010
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IRFZ34N
Abstract: IRF 250
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276cirfz34no-220irf1010+1irf 250
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HFA25PB60
Abstract: IRFP250
Contextual Info: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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hfa25pb60112ncirfp250 |
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irf 9246
Abstract: IRF9Z34N
Contextual Info: IRF9Z34N Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) -B - 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) -A - 1 .3 2 (. 0 5 2 )
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HFA30PA60C
Abstract: IRFP250 irf 44 ns
Contextual Info: PD -2.336 rev. A 04/98 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI
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hfa30pa60cirfp250irf 44 ns |
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IRF540N
Abstract: IRFP140N
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343birfp140no-247irf540n |
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IRL3402
Abstract: MOSFET 700V TO 220
Contextual Info: PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A
S These HEXFET Power MOSFETs were designed
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irl3402o-220mosfet 700v to 220 |
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*f1010e
Abstract: IRF1010E IRF 315
Contextual Info: PD - 9.1670A International IO R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = R ü S o n = Id 60V 0.012Í2 = 81 A(D Description Fifth G e n e ratio n H E X F E T s from International R ectifier
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irf1010ef1010eirf 315 |
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IRFI1310N
Abstract: IRF1310N 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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irfi1310nirf1310n4.5v to 100v input regulator |
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IRL6903
Contextual Info: PD - 9.1538B IRL6903 HEXFET Power MOSFET Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -30V RDS on = 0.011Ω G ID = -105A
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1538birl6903-105ao-220 |
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IRF3315
Contextual Info: PD 9.1623 IRF3315 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.082Ω G Description ID = 21A S Fifth Generation HEXFETs from International Rectifier
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IRFP150N
Abstract: IRF1310N AM 22A irf 9246 IRF 450 MOSFET 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1503 IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G
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irfp150no-247irf1310nam 22a+3irf 9246irf 450 mosfet4.5v to 100v input regulator
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IRFz44n equivalent
Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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irfiz44no-220irfz44n equivalentirfz44n+2irfiz44n equivalentirf 630
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1530A
Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A
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irfi9z34no-2201530af1010e+7irf 10a 55virf 9246i840girf9z34nirf mosfet 10a pirf power mosfetequivalent irf 44
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IRF3205 equivalent
Abstract: irf3205 mosfet transistor irf3205 DRIVER IRF3205 TO-220 EK 110 IRF3205 IRF3205 E DATASHEET IRF3205 IR Equivalent IRF 44 DSA0030791
Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω
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1374birfi3205o-220irf3205 equivalent+9irf3205 mosfet transistorirf3205 driverirf3205 to-220ek 110irf3205irf3205 e datasheetirf3205 irequivalent irf 44dsa0030791
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diode R 360 BL
Abstract: IRFP048N TO-247AC Package IRFZ48N
Contextual Info: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier
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irfp048no-247diode r 360 blto-247ac package+1irfz48n
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f1010e
Abstract: IRFI1010N equivalent IRF1010N IRFI1010N IRF 260 N irf 460 IRF 409
Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier
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irfi1010no-220f1010eirfi1010n equivalent+4irf1010nirf 260 nirf 460irf 409
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irf 930
Abstract: IRF4905 equivalent SEC IRF 640 R 133 A IRF4905 IRFI4905 equivalent of irf4905 IRF 260 N
Contextual Info: PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -41A
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irfi4905o-220irf 930irf4905 equivalent+5sec irf 640r 133 airf4905equivalent of irf4905irf 260 n
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