IRFP 740
Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Contextual Info: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6
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mtp3n60mth6n60mtp6n60irfp 740+9irf 810irf 426irf transistorsirfp 730buz 82diodes buz c 840irf 840diodes buz 840bu 102
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IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
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irf 850mje13005-1transistors bu 40713005 a+613005 ballastirf 426irfp 450 application13007 applicationssgsp364irf 810
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IRFP 740
Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Contextual Info: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7
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irf742fiirf740irf740fisgsp475+15sgsp575irf350irfp350fitsd4m350virf823irf823fiirfp 740sgsp364sgsp369tsd4m250virf 810irfp150sgs100ma010d1tsd4m351v220 to 110 power
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irfp 950
Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6
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sgs35ma050d1tsd4m450vmtp3n60mtp3n60fi+14mth6n60fimtp6n60sthv82sthv102tsd5mg40vsthi07n50fiirfp 950sgsp479transistor buz45sgsp369buz74irfp 740irf 950sgsp239
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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transistor BU 426 A
Abstract: BU426 transistor bc 237c transistor the 6 MHz transistor BF 375
Contextual Info: 17E $ • sssDoib oooma & BU 426 - BU 426 A I TELEFUNKEN ELECTRONIC ■üHLÜtFMKIK] electronic CreativeTetfinok>Q*i T - 33-/3 Silicon NPN Power Transistors Applications: Switching mode power supply features: • In triple diffussion technique • Short switching time
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ial6615a3dine--07transistor bu 426 a+4bu426transistor bc 237ctransistor the 6 mhztransistor bf 375
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D7807
Abstract: D7807G uPD7807 7808 A uPD7809 NEC 7808 PD7807G-36 capacitor MKL IC 7808 CV -CT NEC CSJ
Contextual Info: NEC NEC Electronics Inc. P R E LIM IN A R Y INFORM ATION D escription y u P D 7 8 0 7 /0 8 /0 9 HIGH-END, 8 -B IT , SING LE-CHIP NMOS MICROCOMPUTERS W ITH COMPARATOR AND 8K ROM Pin C onfiguration The a/PD7807//uPD7808///PD7809 single chip m icro com puter augm ents the high-end NEC fam ily of 8 -b it
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upd7807upd7808upd7809/vpd7811+1116-bityipd7809/jpd7808d7807d7807g7808 anec 7808pd7807g-36capacitor mklic 7808 cv -ctnec csj
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IRF3205 equivalent
Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Contextual Info: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test
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o-220/d2pakirf9630irf9510lirf9520+16irf9510irf9z14irf9z34ircz34ircz44irc540irf3205 equivalentirf 9732irfz44n equivalentirf3710 equivalentirf4905 equivalentirc540 equivalentirf 9450irf 9734irf5305 equivalentirf 9740
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siemens mccb
Abstract: MOSFET IRF 1018 MOSFET IRF 630 samco MOSFET IRF 713 SAMCO-vm05 cd632 SAMCO-e MOSFET IRF 603 samco-i
Contextual Info: トップクラスの小形軽量を実現した ニューコンセプトインバータ 原寸大 抜群の操作性と多機能をコンパクトなボディに凝縮 新時代のインバータ シリーズ誕生。 業界トップクラスの小形・軽量・省スペースを実現した汎用インバータ シリーズの誕生です。
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rs485400hz420maiso9001/14001+11k1-v11ja0-0404030ndsiemens mccbmosfet irf 1018mosfet irf 630samcomosfet irf 713samco-vm05cd632samco-emosfet irf 603samco-i
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IRFIBC44LC
Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Contextual Info: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219
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irfibc44lcmosfet irf 3710transistor irfz46nirf2807 equivalent+6irfibc44to-220 irf 3615irfz46nirf 3215 mosfetirf 9740transistor equivalent irf510
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delta dps 298 cp
Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Contextual Info: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X
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corporation/464962-5011/twxtech-71-038delta dps 298 cp+9delta dps 298 cp-1irf 8030irf 4710bbc 598 479 diodef4049sn 94042switching power supplies delta electronics dpsmr 4710ci 4047b
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Contextual Info: 47E j> m aaBSbüs 0 0 3 m 2 5 b » s i e g SIEM EN S SI E M EN S A K T I E N G E S E L L S C H A F AM Receiver for AM Stereo TDA 4010 Preliminary Data Bipolar IC Features • • • • • • Internal demodulation Search tuning stop signal Low total harmonic distortion
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q67000-a8074p-dip-18455khztda4010+1t-77-05-05
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74ls590
Abstract: ic ns 4263
Contextual Info: GD54/74LS590 8-BIT BINARY COUNTERS WITH OUTPUT REGISTERS Features Pin C onfiguration • • • • • 8-Bit Counter with Register Parallel Register Outputs Counter has Direct Clear 3-State Outputs Guaranteed Counter Frequency . DC to 2 0 MHz Vcc Qa G
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Contextual Info: FEDL7386B-07 Issue Date: Apr. 16, 2014 ML7386/7386B Sub GHz band wireless transmitter IC •Overview ML7386/ML7386B are a low power RF transmitter IC for narrowband system. It includes RF part, MOD part and HOST interface part in single-chip. It supports various frequency band from 200 MHz to 972 MHz. It is possible to
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fedl7386b-07ml7386/7386bml7386/ml7386bml7386+1ml7386b
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NEC 7808
Abstract: 7809 A PI 505 7808 A PD7808 7809 pi uPD7809 PD7811 7808 nec
Contextual Info: SEC NEC Electronics Inc. yuP D 7807/08/09 HIGH-END, 8-B IT, SINGLE-CHIP NMOS MICROCOMPUTERS WITH COMPARATOR AND 8K ROM PRELIMINARY INFORMATION D escription Pin Configuration The yuPD7807//uPD7808///PD7809 single chip m icro com puter augm ents the high-end NEC fam ily of 8 -b it
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upd7807upd7808upd7809the//pd7811+916-bit//pd7808nec 78087809 a pi 5057808 apd78087809 pipd78117808 nec
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2SC780
Abstract: GE Transistor Manual 2SA421 transistor 2SC780
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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170ns140fts120ns2sc780+3ge transistor manual2sa421transistor 2sc780
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IRF450R
Abstract: F450 RF-45
Contextual Info: £S HARRIS IR f 4 5 0 /4 5 1 /4 5 2 /4 5 3 IR F 4 5 0 R /4 5 1 R /4 5 2 R /4 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features T O -2 0 4 A A • 11A and 13A, 450V - 500V • ros on = 0 .4 i! and 0 .5 fi • Single Pulse Avalanche Energy Rated*
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irf450irf451irf452irf453+7irf450rirf451rirf452rirf453rre14bf450rf-45
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Contextual Info: • 4305271 0053^3 3Ì HARRIS TTE ■ HAS IR F430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • rDS on = 1 -5 il and 2 .0 0 • Single Pulse Avalanche Energy Rated*
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f430/431/432/433irf430r/431r/432r/433rirf430irf431+6irf432irf433irf430rirf431rirf432rirf433r
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1RF440
Contextual Info: • 4 3 D5 2 7 1 0 0 5 3 Tk>fl 574 ■ Jg HARRIS HAS IR F 4 4 0 /4 4 1 /4 4 2 /4 4 3 IR F 4 4 0 R /4 4 1R /4 4 2 R /4 4 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Û 4A A BOTTOM VIEW • 7A and 8A, 4 50 V - 500V
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irf440irf441irf442irf443+2figure14b1rf440
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Contextual Info: • 4302271 00S3T73 T31 2 H A R R IS ■ HAS IR F 450/451/452/453 IRF450R /451R /452R /4S 3R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package T O -2 0 4 A A 11A and 13A, 4SOV - 5 0 0V • r o s ( o i = 0 .4 ÎÎ an d 0 .5 f i
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00s3t73irf450r/451r/452r+5irf450irf451irf452irf453irf451r
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RF433
Abstract: 432r
Contextual Info: 3] HARRIS IRF430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 P a ckage Features T Q -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • t S on) = 1-5 fl and 2.0C I DRAIN /(FLA N G E ) • Single Pulse Avalanche Energy Rated*
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irf430/431/432/433irf430r/431r/432r/433rirf430irf432+3f430rrf433432r
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transistor tt 2170
Abstract: hudi HD64F2170 Nippon capacitors
Contextual Info: REJ09B0149-0200Z The revision list can be viewed directly by cliking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2172Group Hardware Manual
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rej09b0149-0200zh8s/2172group16-bitfamily/h8s/2100+7h8s/2170hd64f2170d-85622h8s/2172transistor tt 2170hudinippon capacitors
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HD64F2170
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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transistor tt 2170
Abstract: ep3285 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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h8s/2172rej09b0149-0200ztransistor tt 2170ep3285+1nippon capacitors
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