IRC530 EQUIVALENT Search Results

Contextual Info: PD-9.454D International Iksr]Rectifier IRC530 HEXFET P ow er M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 100V ^DS on = 0 .1 6 Í2

IRCZ34 equivalent

Abstract: 1RCZ44 IRCZ34 C024
Contextual Info: International IO R Rectifier HEX Part Size Number HEXFET Power MOSFETs Cp>v N fF fN A '- C 'S /- . www.irf.com r S iw H r 'C - Vos Recommended Source Bonding Wire ^DS on Die Outline Figure mils mm Equivalent Device Type IRCZ24 HEXSense® Die N-Channel :

IRC540 equivalent

Abstract: IRFC9034 irfc9024 IRFC9230 IRLC140 IRFC9220 IRLC120 IRF9540 equivalent IRF9640 equivalent IRL530 equivalent
Contextual Info: H EXFET International Power MOSFETs Table I. HEXFET III Die Continued HEX Size Part Number VDS RDS(on) Max Die (1) Outline Figure S Ö H R e C t if ie r Recomm. Source Bonding Wire mils I Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4

IRC540 equivalent

Abstract: IRF9540 equivalent IRL530 equivalent IRF9640 equivalent IRLC140 IRLC120 IRFC9034 irfc9120 IRFC9110 IRLC034
Contextual Info: I n t e r n a t i o n a l R e c t i f ie r n sa H HEXFET Power MOSFETS HEX Sia PartNumber Recommended Source Bonding Win mis mm Vos R0S on M" Die Olitine Rgurt -60 -100 -200 -60 -100 -200 -60 -100 -200 -100 -200 0.500 1.200 3.000 0.280 0.600 1.500 0.140

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Contextual Info: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES